Influence of Hydrostatic Pressure on the Fundamental Absorption Edge of TlGaSe2, TlGaS2, and TlInS2 Crystals

Allakhverdiev, K. R.; Mamedov, T. G.; Panfilov, V. V.; Shukyurov, M.M.; Subbotin, S. I.

doi:10.1002/pssb.2221310145

Cited by 16 publications

(8 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[131] InTe X-ray 5 and 15 [16] Allakhvrdiev et al [139] observed some features in the fundamental absorption edge of TlGaS 2 , TlGaSe 2 and TlInS 2 crystals under pressure and tried to explain them suggesting phase transitions in the pressure range of 0.3-0.9 GPa.…”

Section: Layered Crystalsmentioning

confidence: 99%

Electronic properties and phase transitions in low-dimensional semiconductors

Panich

2008

J. Phys.: Condens. Matter

141

127

View full text Add to dashboard Cite

We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I–V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor–metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. The electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed.

show abstract

Section: Layered Crystalsmentioning

confidence: 99%

Electronic properties and phase transitions in low-dimensional semiconductors

Panich

2008

J. Phys.: Condens. Matter

141

127

View full text Add to dashboard Cite

show abstract

“…The majority of investigations of ternary compounds concentrate on phase transitions, which are observed clearly in at least TlGaSe 2 and TlInS 2 [5,8]. It is known that each of these crystals undergoes a phase transition with lowering of the temperature from the paraelectric phase to the incommensurate phase (T i = 216 K for TlInS 2 and T i = 120 K for TlGaSe 2 ) and then to the ferroelectric phase (T c = 202 K for TlInS 2 and T c = 107 K for TlGaSe 2 ) with quadrupling of the unit cell along the 'C'-axes.…”

Section: Introductionmentioning

confidence: 99%

Deformation effects in electronic spectra of the layered semiconductors TlGaS₂, TlGaSe₂and TlInS₂

Allakhverdiev

Mammadov

Suleymanov

et al. 2003

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The deformation effects in electronic spectra of the ternary layered semiconductors TlGaS 2 , TlGaSe 2 and TlInS 2 are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions on the band gap of the crystals investigated can be described in the framework of one common model of deformation potentials. This model appears to be close to that of layered semiconductors of the A 3 B 6 group, attesting to the fact that the main principles of formation of band structure in these two groups of layered crystals are the same.

show abstract

“…Optical absorption (OA) spectra in the region of fundamental absorption [2,8,9], Raman studies and infrared reflection (IR) spectra [3,10,11] have also been reported. The discovery of low temperature PT [12] and influence of hydrostatic pressure on the band edge absorption [13], excitonic luminescence [14] and low temperature photoluminescence (PL) [15] greatly enhanced the interest in the physical properties of this crystal. Although there were many valuable works on this compound, no information on the band structure of TlGaS 2 has been established due to the several polytype modifications [16].…”

Section: Introductionmentioning

confidence: 99%

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

Abay

Güder

Efeoǧlu

et al. 2001

phys. stat. sol. (b)

View full text Add to dashboard Cite

The dependence of the absorption coefficient on the photon energy and sample temperature near the fundamental absorption edge (AE) was investigated for TlGaS 2 layered semiconductor crystals. The exponential absorption tails observed in the 10-340 K temperature range were interpreted as Urbach-Martienssen (U-M) tails. From the analysis of these tails, characteristic Urbach parameters were determined. The results lead to the conclusion that the temperature dependence of the absorption tails near the fundamental AE of TlGaS 2 is the result of thermal disorder.

show abstract

Influence of Hydrostatic Pressure on the Fundamental Absorption Edge of TlGaSe₂, TlGaS₂, and TlInS₂ Crystals

Cited by 16 publications

References 4 publications

Electronic properties and phase transitions in low-dimensional semiconductors

Electronic properties and phase transitions in low-dimensional semiconductors

Deformation effects in electronic spectra of the layered semiconductors TlGaS₂, TlGaSe₂and TlInS₂

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

Contact Info

Product

Resources

About

Influence of Hydrostatic Pressure on the Fundamental Absorption Edge of TlGaSe2, TlGaS2, and TlInS2 Crystals

Cited by 16 publications

References 4 publications

Electronic properties and phase transitions in low-dimensional semiconductors

Electronic properties and phase transitions in low-dimensional semiconductors

Deformation effects in electronic spectra of the layered semiconductors TlGaS2, TlGaSe2and TlInS2

Urbach-Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2

Contact Info

Product

Resources

About

Influence of Hydrostatic Pressure on the Fundamental Absorption Edge of TlGaSe₂, TlGaS₂, and TlInS₂ Crystals

Deformation effects in electronic spectra of the layered semiconductors TlGaS₂, TlGaSe₂and TlInS₂