Influence of In dopant on PL Spectra of CdZnTe Crystals

Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations

“…As is generally known a larger intensity ratio of I bound exciton / I D indicates a lower density of detrimental carrier traps and accordingly reveals higher crystallinity and improved detector quality of a sample [1,9]. From this we can conclude that at In dopant concentrations of about 8 Â 10 16 cm À3 the crystalline quality of the Cd 0.9 Zn 0.1 Te:In nuclear radiation detector is improved [2,7,8]. An additional proof for the above conclusion is decreasing full width at half-maximum (FWHM) of the D 0 X emission line.…”

Polarization Dependent Reflectivity and Transmission for Cd1-Xznxte/GaAs(001) Epifilms in the Far-Infrared and Near-Infrared to Ultraviolet Region

“…In the electronic industry, as the veracity of using semiconductor materials intensifies -so does the compulsion of employing reliable and reproducible methods for appraising their distinctive qualities. In assessing the nature of defects and degree of crystallinity, many experimental techniques have been employed in the past, such as the Fourier transform infrared (FTIR) reflectivity and transmission [9,10], Raman scattering (RS) [8], photoluminescence (PL) [11], synchrotron X-ray diffraction (S-XRD) topography [1][2][3], and deep level transient spectroscopy (DLTS) [12], etc. In addition, the spectroscopic ellipsometry (SE) is perceived as an equally valuable tool for appraising the optical constants of semiconductor materials and evaluating the epifilm thickness [13].…”