2007
DOI: 10.1016/j.tsf.2006.08.014
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Influence of incidence angle and distance on the structure of aluminium nitride films prepared by reactive magnetron sputtering

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Cited by 20 publications
(14 citation statements)
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“…At 50% of nitrogen flow ratio, the columnar structure was tilted to about the 1 o'clock position. The phenomenon that the tilted columnar structure is appeared is similar to the results of AlN film prepared at an incidence angle of 451 [12]. As the nitrogen flow ratio increases to 70% and 100%, the columnar patterns, titled to the 11 o'clock position, were deposited with thicknesses of 1300 and 1400 nm, respectively.…”
Section: Methodssupporting
confidence: 73%
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“…At 50% of nitrogen flow ratio, the columnar structure was tilted to about the 1 o'clock position. The phenomenon that the tilted columnar structure is appeared is similar to the results of AlN film prepared at an incidence angle of 451 [12]. As the nitrogen flow ratio increases to 70% and 100%, the columnar patterns, titled to the 11 o'clock position, were deposited with thicknesses of 1300 and 1400 nm, respectively.…”
Section: Methodssupporting
confidence: 73%
“…Recently, some researchers have investigated how the growth parameter has effects on the crystal orientation and optical properties of AlN layer [9][10][11][12]. Verardi et al [9] reported on the crystalline AlN thin films grown at 200-450 1C on sapphire substrates by pulsed laser deposition with ablating Al target in nitrogen reactive atmosphere.…”
Section: Introductionmentioning
confidence: 99%
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“…Although not shown here, it should be noted that other target-substrate distances such as 45 mm have also been These results, as well as the high amount of data available in the literature, showing highly textured AIN thin films at a multitude of target-substrate distance values (Chen et al 2005;Kar et al 2008;You and Kim 2007) lead us to the conclusion that this parameter by itself does not play a significant role. In other words, highly oriented AIN thin films can be obtained in a wide range of target-substrates distances going from 30 to 70 mm.…”
Section: Fwhm [°]mentioning
confidence: 58%
“…Application of magnetron technique facilitates the growth of polycrystalline AlN films on large substrates at a low temperature (as low as 200 • C or even at room temperature) with the same properties like those films obtained through CVD and MBE. [19][20][21][22] In a reactive-magnetron process, molecules of a reactive gas combine with the sputtered atoms from a metal target to form a compound thin film on a substrate. Thereby, the optical, electronic and structural properties of the resulting films can be modified by the experimental deposition conditions.…”
Section: Introductionmentioning
confidence: 99%