Influence of indium on the dissociation of dislocations in GaAs at high temperature

Abstract

Dislocations have been introduced in GaAs doped with indium, by plastic deformation between 773 K and 1 373 K. Transmission electron microscope observations have shown that indium increases the width of dissociation. This can explain the reduction of as-grown dislocations in In doped GaAs

Dislocation multiplication in GaAs : inhibition by doping

“…m-2. The distance between partials was the same for the various test temperatures [60]. On the contrary, for In doped GaAs with [In ] = 5 x 1019 at.cm-3 deformed at 500 °C, the S.F.E.…”

“…An even larger decrease in S.F.E. has been observed in GaAs containing 1 to 4 x 1020 at.cm-3 of In deformed between 650 and 1 000 °C [60] ; with a separation between partials of 9 ± 1 nm, the S.F.E. is 27 mJ.…”

“…6 and 7). The polygonization substructure appears at higher temperature for higher indium concentration [60]. 4.2.2 Dislocation dissociation.…”

Dislocation cell structures in melt‐grown semiconductor compound crystals

“…In consequence, the yield stress is enhanced by dislocation locking. Jiminez-Melendo et al [90] observed a decrease in the stacking fault energy when GaAs was doped with In. They explained this effect by Suzuki segregation or direct interaction between solute atoms and stacking fault making cross-slip events more unlikely.…”

Thermodynamics, Origin, and Control of Defects

“…In consequence, the yield stress is enhanced by dislocation locking. Jiminez-Melendo et al [90] observed a decrease in the stacking fault energy when GaAs was doped with In. They explained this effect by Suzuki segregation or direct interaction between solute atoms and stacking faults making cross-slip events more unlikely.…”