Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

Li, X.; Zhao, Degang; Yang, Jiankun; Jiang, Desheng; Liu, Z.S.; Chen, P.; Zhu, Jianjun; Liu, W.; He, Xiaowu; Liang, Feng; Zhang, L.Q.; Liu, J.P.; Yang, Hui; Zhang, Y.T.; Du, Guotong

doi:10.1016/j.spmi.2016.06.023

Cited by 17 publications

(7 citation statements)

References 33 publications

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“…4 . All the samples exhibit S-shaped curves, which is a typical feature of the localization effect in InGaN/GaN MQWs structures [ 51 ]. The redistribution of carriers in the deep and shallow localized centers contributes to the first red-shift and then blue-shift of peak energy, as the temperature increases from 10 to 150 K. With further increase in the temperature to 300 K, the temperature induced band-gap shrinkage contributes to the red-shift of peak energy [ 52 ].…”

Section: Resultsmentioning

confidence: 99%

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

et al. 2017

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InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.

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Section: Resultsmentioning

confidence: 99%

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

et al. 2017

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“…Many scholars have studied InGaN. Firstly, they focused on that InN and InxGa1-xN materials can be prepared in different growth technologies with different In and Ga raw materials [4,5]. Paying attention to study on InGaN quantum well [6]and growth of n -polar InGaN alloy films on high quality npolar GaN templates [7].…”

Section: Introduction mentioning

confidence: 99%

DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

Wang¹,

Liu²,

Zhai³

et al. 2019

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Using the density functional theory (DFT) of the first principle and Generalized gradient approximation method, the electronic structures and optical properties of the InxGa1-xN crystals with different x (x = 0.25, 0.5, 0.75, 1) have been calculated in this paper. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of complex dielectric function, absorption spectrum and transitivity. With the increase of x, the computational result shows that the optical band gap (i.e.Eg) of the InxGa1-xN crystal tends to be narrow, then the absorption spectrum shifts to the low-energy direction. And the Fermi energy slightly moves to the bottom of conduction band which would cause the growth of conductivity by increasing x. In a word, the InxGa1-xN compound can be achieved theoretically the adjustable Eg and photoelectric performance with x, which will be used in making various optoelectronic devices including solar cell and sensors.

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“…It can be seen that the peak energy of the two samples shows an obvious red-shift in the low temperature region (10 to 70 K), commonly caused by carriers transporting to indium-rich deep localization centers [32]. As temperature increases from 70 to 150 K, thermally activated carriers jump out of deep localization centers and migrate to shallow localization centers, resulting in the blue-shift in peak energy [33].…”

Section: A C C E P T E D Accepted Manuscriptmentioning

confidence: 94%

Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

Zhu

Lü

Zhou

et al. 2017

Superlattices and Microstructures

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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

Cited by 17 publications

References 33 publications

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

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