Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition

Balaji, M.; Ramesh, R.; Arivazhagan, P.; Jayasakthi, M.; Loganathan, R.; Prabakaran, K.; Suresh, S.; Lourdudoss, Sebastian; Baskar, K.

doi:10.1016/j.jcrysgro.2014.10.055

Cited by 19 publications

(14 citation statements)

References 34 publications

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“…The only degree of freedom offered to explain such variability is the tensile stress due to the primary island coalescence. It allows the matching of all the measured stresses by involving islands sizes with sizes in the 10-50 nm range, in agreement with literature results [13,32,55] (see next section). The primary island nucleation is the main contributor to thin film stress when depositing AlN on sapphire.…”

Section: General Discussion On the Effect Of Process Parameterssupporting

confidence: 88%

“…So we can conclude that within the range of parameters tested, small nucleation islands or strong tensile stresses are correlated with good quality of AlN layers. This conclusion strengthens the results of Balaji et al [13,32,55] showing that low temperature nucleation layer (so small nucleation islands with high surface density) prior to epitaxial growth of AlN could be beneficial for improving crystal quality.…”

Section: Correlation Between Responsessupporting

confidence: 89%

“…In situ etching to control void formation and stress release [17], multi-step methods to control island coalescence [32][33][34] or N/Al ratio [33,35], pulse injection of precursors [36], substrate position in turbulent flow [37] have been proposed to reduce strain, high dislocation densities and the appearance of cracks. The results are generally characterized by Raman spectrometry and the shift of the E 2 (h) phonon peak and by full width at half maximum (FWHM) values of X-ray rocking curves for tilt and twist components of the hexagonal crystal structure.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

et al. 2017

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Abstract:This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of the HVPE epitaxial growth of AlN on (0001) sapphire will illustrate this approach. The study proposes the assessment of the influence of 15 process parameters on the quality or desired properties of the grown layers measured by 9 responses. The general method used is a screening design with the Hadamard matrix of order 16. For the first time in the growth of AlN by CVD, a reliable estimation of errors is proposed on the measured responses. This study demonstrates that uncontrolled release of condensed species from the cold wall is the main drawback of this process, explaining many properties of the grown layers that could be mistakenly attributed to other phenomena without the use of a DOE. It appears also that the size of nucleation islands, and its corollary, the stress state of the layer at room temperature, are key points. They are strongly correlated to the crystal quality. Due to the intrinsic limitations of the screening design, the complete optimization of responses cannot be proposed but general guidelines for hydride (or halogen) vapor phase epitaxy (HVPE) experimentations, in particular with cold wall apparatus, are given.

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Section: General Discussion On the Effect Of Process Parameterssupporting

confidence: 88%

Section: Correlation Between Responsessupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

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Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

et al. 2017

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“…Generally, the lattice constants c of the layer perpendicular to the interface are calculated from the one or two high-angle symmetric (000 l ) plane reflections, such as (0004), (0006), and (0008) plane [27,28]. On the other hand, the lattice constant a is parallel to the layer interface and can be derived using the one or more diffraction peaks of the high-angle asymmetrical plane reflections, such as (10)(11)(12)(13)(14), (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24), (10)(11)(12)(13)(14)(15), and (20)(21)(22)(23)(24) [27,28].…”

Section: Calculation Of Strain and Stress Values In The Aln Epilayersmentioning

confidence: 99%

“…Many more studies were published on the effects of the LT-AlN nucleation layers on the crystal quality of the AlN layers grown on SiC substrate [12]. Previous studies indicate that the growth condition of the AlN nucleation layer (NL), such as growth temperature, recrystallization temperature, recrystallization time, growth pressure, and molar V/III ratios have a strong influence on the crystal quality and the stress form in the AlN layer and grown IIInitride materials on that AlN layer [11,13,[17][18][19][20]24,25]. However, there is no systematic investigation about the influence of LT-AlN(NL) growth times on the mosaic structures parameters and strain behaviour of the AlN epilayer grown on 6H-SiC substrate.…”

Section: Introductionmentioning

confidence: 99%

Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate

Arslan

Öztürk

Özçelik

et al. 2019

Philosophical Magazine

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The influence of the LT-AlN(NL) growth times on the mosaic structure parameters of the AlN layer grown on the LT-AlN (NL)/6H-SiC structures as well as the dislocation densities and the strain behaviours in the AlN epilayers has been investigated using XRD measurements. The growth times of the LT-AlN(NL) were changed to 0, 60, 120, 180, and 240 s. We observed that the mosaic structure parameters of the AlN epilayers were slightly affected by the LT-AlN(NL) growth times. However, the dislocation densities in the AlN layer are affected by the growth times of the LT-AlN(NL) layer. The highest edge dislocation density (5.48 × 10 10 ± 2.3 × 10 9 cm −2) was measured for the sample in which 120 s grown LT-AlN(NL) was used. On the other hand, highest screw type dislocation density (1.21 × 10 10 ± 1.7 × 10 9 cm −2) measured in the sample E that contains 240 s growth LT-AlN(NL). The strain calculation results show that the samples without LT-AlN(NL) suffered maximum compressive in-plane strain (−10.9 × 10 −3 ± 1.8 × 10 −4), which can be suppressed by increasing the LT-AlN(NL) growth times. The out-of-plane strain also has a compressive character and its values increase with LT-AlN(NL) growth times between 60 and 180 s. Same out-of-plane strain values were measured for the LT-AlN(NL) growth times of 180 and 240 s. Furthermore, the form of the biaxial stress in the AlN epilayer changed from compressive to tensile when the LT-AlN(NL) growth times were greater than 120 s.

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Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition

Zhang

Deng

et al. 2022

Physica Status Solidi (b)

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Herein, regulation of the growth mode through manipulating the V–III ratio during metal‐organic chemical vapor deposition (MOCVD) growth of AlN films on c‐plane sapphire substrates and optimization of the crystalline quality and surface morphology of AlN films are demonstrated. Based on detailed analyses of the evolution process of surface morphology, dislocation annihilation, and stress state of the AlN film during MOCVD growth, it is found that 2D rather than 3D growth mode introduces tensile stress as well as promotes edge‐type threading dislocation (ETD) propagation and crack generation, while 3D growth mode produces rough surface. These results would help to further understand the AlN growth mechanism and provide important guidance on the preparation of AlN‐related epitaxial structure.

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Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition

Cited by 19 publications

References 34 publications

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate

Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition

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