Influence of Initial Silicon Defects on Processes of the Dioxide Silicon Defect Formation

Smyntyna, V.; Кулініч, Оксана Андріївна; Glauberman, M. A.; Chemeresuk, G.; Yatsunskiy, I. R.; Sviridova, Olga

doi:10.1109/crmico.2006.256126

Cited by 2 publications

(2 citation statements)

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“…A specific feature of the solution to the problem associated with the use of optimal filtering to isolate and predict the random component of the model under consideration is the nonlinearity of evolutionary equations [29][30].…”

Section: Prediction Of the Random Component Of The Development Model Of Manufacturing Defects Of The Surface Layer Of The Functional Subsmentioning

confidence: 99%

Mathematical Model of the Development of Manufacturing Defects in the Surface Layer of Substrates of Moems’ Functional Components

Невлюдов

Omarov

Chala

2020

Eskişehir Technical University Journal of Science and Technology a - Applied Sciences and Engineering

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A mathematical model of the development of manufacturing defects, with the prediction of the random component of the model in the substrates of functional components of MOEMS, which are made of semiconductors, in particular, silicon, are developed in the article. The main manufacturing defects that arise in the surface layer of the substrates of the MOEMS functional components taking into account the technological processes of their production and dynamic processes were used when developing the model. The developed mathematical model takes into account the occurrence of a random component of the model with its predictive ability. The possibility of such control is the basis for the development of the scientific direction of technology and equipment for the production of semiconductors, materials and electronic devices-defect engineering, based on the management and forecasting of defect formation processes.

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Section: Prediction Of the Random Component Of The Development Model Of Manufacturing Defects Of The Surface Layer Of The Functional Subsmentioning

confidence: 99%

Mathematical Model of the Development of Manufacturing Defects in the Surface Layer of Substrates of Moems’ Functional Components

Невлюдов

Omarov

Chala

2020

Eskişehir Technical University Journal of Science and Technology a - Applied Sciences and Engineering

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show abstract

“…The disordered silicon layer and the dislocation network layer are both present in this structure. Also, the additional chemical treatment of dislocation networks allowed us to obtain nanostructured silicon surface which fluoresces in a visible spectrum range [1]. Such a periodical structure as a dislocation network is a consequence of self-organization processes of defects at near-surface silicon layers of the Si-SiO2 interface.…”

Section: Introductionmentioning

confidence: 99%

Dislocation Self-Organization Processes in Silicon during High-Temperature Oxidization

Iatsunskyi

2014

AMR

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The dislocation self-organization processes in near-surface silicon layers of Si-SiO2 during high temperature oxidization have been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. We have proposed the defect formation mechanism of near-surface layers in Si-SiO2 structure. For self-organization processes to be explained, the synergetic method was applied. It was shown that the formation of periodical dislocation structures at the interface is a consequence of the spatial instability of the dislocation distribution in the crystal, their self-organization due to correlation effects between the oxygen diffusing along structural defects and an ensemble of dislocations.

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Influence of Initial Silicon Defects on Processes of the Dioxide Silicon Defect Formation

Cited by 2 publications

References 0 publications

Mathematical Model of the Development of Manufacturing Defects in the Surface Layer of Substrates of Moems’ Functional Components

Mathematical Model of the Development of Manufacturing Defects in the Surface Layer of Substrates of Moems’ Functional Components

Dislocation Self-Organization Processes in Silicon during High-Temperature Oxidization

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