Influence of interface interruption on spin relaxation in GaAs (110) quantum wells

Liu, L.S.; Wang, W.X.; Li, Z.H.; Liu, B.L.; Zhao, Hongming; Wang, J.; Gao, Haiying; Zhi, Junge; Liu, S.; Chen, Hua; Zhou, Jian

doi:10.1016/j.jcrysgro.2006.11.074

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…Hence, they are mainly used for probing information about the spin dynamics of charge carriers in materials. 118,119 TRFR and TRKR techniques involve two ultra-short laser pulses. The first consists of a circularly polarized pump laser pulse and the second involves a linearly polarized probe pulse.…”

Section: Characterization Techniques For Defect Passivationmentioning

confidence: 99%

Current state-of-the-art characterization methods for probing defect passivation towards efficient perovskite solar cells

Cao

et al. 2022

J. Mater. Chem. A

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Section: Characterization Techniques For Defect Passivationmentioning

confidence: 99%

Current state-of-the-art characterization methods for probing defect passivation towards efficient perovskite solar cells

Cao

et al. 2022

J. Mater. Chem. A

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“…5,23 Although the DP mechanism is ideally suppressed in (110) QWs, 12 a random built-in asymmetry in QWs resulting from alloy fluctuations or an interface roughness between the QWs and barrier layers may lead to in-plane components of B SIA that induce DP spin relaxation. [24][25][26] Thus, we cannot determine the origin of shortening of the T s in an electric field at this moment.…”

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confidence: 95%

Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

Yokota

Aoshima

Ikeda

et al. 2014

Applied Physics Letters

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Articles you may be interested inRoom temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells Appl. Phys. Lett. 97, 202102 (2010); 10.1063/1.3514675 Electron spin relaxation time in GaAs/AlGaAs multiple quantum wells grown on slightly misoriented GaAs(110) substrates Appl. Phys. Lett. 97, 081111 (2010); 10.1063/1.3483768Photoluminescence and photo-modulated reflectance spectra of ion-implanted GaAs/AlGaAs coupled quantum wells

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“…Regarding (2), it is considered that improvement of hetero-interface morphology may increase spin relaxation time due to the suppression of the DP process through decrease of the SIA term [4]. Recently, increase of spin relaxation time in (110)-oriented GaAs/AlGaAs QWs grown with interface growth interruption (GI) was reported [5]. However, effect of growth interruption on electron spin relaxation was not fully understood.…”

mentioning

confidence: 99%

Effect of Growth Interruption on Electron Spin Relaxation in (110)-Oriented GaAs/AlGaAs Quantum Wells

Iba¹,

Fujino²,

Fujimoto³

et al. 2008

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials

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IntroductionRecently, in semiconductors, spin devices such as spin-FET and -LED become a focus of interest. Spin dynamics has to be characterized in order to realize the spin devices. One of the significant factors in spin dynamics is electron spin relaxation time. Long spin relaxation time is beneficial for the manipulation of the spin states of electrons. In order to obtain long spin relaxation time, it is necessary to understand spin relaxation mechanisms in detail. It is well known that the dominant spin relaxation mechanism at room temperature in zinc blende semiconductors such as GaAs is D'yakonov-Perel' (DP) mechanism [1, 2]. In the DP process, electron spin relaxation in GaAs/AlGaAs quantum wells (QWs) derives from two types of inversion asymmetry: (1) the bulk inversion asymmetry (BIA) and (2) the structural inversion asymmetry (SIA). Regarding (1), H. Ohno et al. demonstrated dramatically long spin relaxation time in (110)-oriented GaAs/AlGaAs QWs due to the suppression of the DP process through decrease of the BIA term [3]. Regarding (2), it is considered that improvement of hetero-interface morphology may increase spin relaxation time due to the suppression of the DP process through decrease of the SIA term [4]. Recently, increase of spin relaxation time in (110)-oriented GaAs/AlGaAs QWs grown with interface growth interruption (GI) was reported [5]. However, effect of growth interruption on electron spin relaxation was not fully understood. Then, in order to investigate correlation between the hetero-interface roughness and electron spin relaxation time, we fabricated GaAs/AlGaAs QWs on GaAs (110) substrates using molecular beam epitaxy (MBE) with interface growth interruption and evaluated electron spin relaxation time in (110) QWs.

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Influence of interface interruption on spin relaxation in GaAs (110) quantum wells

Cited by 8 publications

References 24 publications

Current state-of-the-art characterization methods for probing defect passivation towards efficient perovskite solar cells

Current state-of-the-art characterization methods for probing defect passivation towards efficient perovskite solar cells

Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

Effect of Growth Interruption on Electron Spin Relaxation in (110)-Oriented GaAs/AlGaAs Quantum Wells

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