Influence of inverter DC voltage on the reliability of IGBT

Yang, Miao; Lei, Weimin; Li, Shunxin; Lv, Xin; Li, Bo; Wang, Pengzhan; Xu, Jianzhong; Li, Huawei

doi:10.1063/1.5038995

Cited by 5 publications

(6 citation statements)

References 2 publications

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“…In Figure 7, the maximum variation of FWD junction temperature (∆T j2 ) is 56.3 • C, and that of IGBT (∆T j1 ) is 39.7 • C. Junction temperature variation severely affects device lifetime [20,21]. According to the experimental data of LESIT [22] and CIPS08 [23], the junction temperature change and the average junction temperature are the key factors affecting the aging process. Table 2 shows the maximum values of ∆T j2 and∆T j1 under different load conditions [24].…”

Section: Baft and The Analysis Of Baft Resultsmentioning

confidence: 99%

Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

et al. 2019

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The switching device is relatively weakest in the traction converter, and this paper aims at the fault prediction of it. Firstly, the mathematical distribution is analyzed based on the results that were obtained in electro thermal simulation and a single-directional accelerated fatigue test. Then, the accelerated fatigue test with bi-directional fatigue current is proposed, the data from which reflects the accelerating effect from FWD on the device aging process. The analytical model of fatigue process is fitted with the data that were obtained in the test. In order to shorten the test time consumption, we propose a weighted least squares method (LSM) to fit the failure data. Finally, the prediction model is presented with the consideration of fatigue signature and Arrhenius temperature factor.

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Section: Baft and The Analysis Of Baft Resultsmentioning

confidence: 99%

Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

et al. 2019

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“…Switching loss in the IGBT occurs in the transient state between conduction and cutoff. Miao et al (2018) state that IGBT switching loss can be represented as…”

Section: Proceedings Of the Ieom International Conference On Smartmentioning

confidence: 99%

“…This derivation demonstrates that, for any given operating point of the IGBT-based inverter, 𝑃𝑃 𝑇𝑇𝑟𝑟 is a function of 𝐼𝐼 𝑑𝑑𝑐𝑐 and 𝑉𝑉 𝑑𝑑𝑐𝑐 as all other terms are constant. Miao et al (2018) state that diode conduction loss can be represented as…”

Section: Proceedings Of the Ieom International Conference On Smartmentioning

confidence: 99%

“…This simulation can be performed in software such as PSpice, which utilizes a real component library, ensuring high accuracy in our results. Mobility and Vehicle Electrification Detroit, Michigan, USA, October 10-12, 2023 © IEOM Society International 1.1 IGBT Power Loss Miao et al (2018) postulate that IGBT conduction loss can be represented as…”

Section: Introductionmentioning

confidence: 99%

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Development of Electric Vehicle Simulation Model with DC BUS V/I-dependent Efficiency Map for Si IGBT and SiC MOSFET-based Traction Inverters

Kyger,

R.Taylor,

Duan

2023

Proceedings of the International Conference on Industrial Engineering and Operations Management

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In the realm of electrified vehicle development, vehicle simulations employing drive cycle inputs typically span thousands of seconds. Within this time domain, executing inverter motor control simulations with step sizes smaller than 1ms is not practical. To address this challenge, this research proposes a method of modeling electrified vehicles using an inverter efficiency map predicated on DC bus voltage and current. Theoretical analyses have corroborated that pivotal factors-such as collector voltage and current for Insulated-Gate Bipolar Transistors (IGBT) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) -are dictated by the DC bus voltage and current, provided that the switching frequency and modulation index are fixed. Hence, power electronics simulations of inverters can be conducted at varying DC bus voltages and currents to create efficiency maps for prospective semiconductors. Tests have been performed on the Silicon IGBT IKW50N60DTP and Silicon Carbide MOSFET C3M0015065K. With the inclusion of the developed efficiency maps, a Tesla Model S vehicle model has been constructed and simulated. The simulation results from the combined Urban Dynamometer Driving Schedule (UDDS) and Highway Fuel Economy Test (HFET) drive cycle confirm that the SiC MOSFET-based inverter boasts greater and more consistent efficiency than its Si IGBT counterpart.

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“…For instance, [31] studies the effect of switching frequency on the MMC reliability, where an optimal switching frequency is then calculated by comprising between the reliability and total harmonic distortion. In [32], the influence of the DC-link voltage value on the IGBT lifetime in three-phase inverters has been investigated. Additionally, modulation schemes can affect the converter reliability.…”

Section: Power Electronic-based Power Systems and Challengesmentioning

confidence: 99%

System-Level Reliability Modeling and Evaluation in Power Electronic-based Power Systems

Davoodi¹

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Influence of inverter DC voltage on the reliability of IGBT

Cited by 5 publications

References 2 publications

Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM

Development of Electric Vehicle Simulation Model with DC BUS V/I-dependent Efficiency Map for Si IGBT and SiC MOSFET-based Traction Inverters

System-Level Reliability Modeling and Evaluation in Power Electronic-based Power Systems

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