Influence of ion assisted deposition on interface broadening in Fe/Al multilayers investigated by medium energy ion scattering

Al-Busaidi, M.; Bailey, Paul; Noakes, T.C.Q.; Cropper, Michael D.

doi:10.1016/j.vacuum.2009.06.002

Cited by 5 publications

(1 citation statement)

References 26 publications

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“…The thermodynamically polar and electrochemically stable pure MgF 2 region with evenly dispersed pores as pathways for the Zn ions can relieve the de-solvation barrier of the Zn ions and improve the HER resistance of the Zn metal, thereby lowering the interfacial resistance of the Zn metal electrode. Additionally, the distinctively gradient Zndoping conformation formed by the interdiffusion mechanism during the sputtering process [23][24][25][26][27]; enhances the Zn ion transfer kinetics owing to an electrostatic driving force caused by Maxwell-Wagner polarization between Zndoping and MgF 2 matrix [19,28]; it also guides the Zn ion deposition by the high concentration of doping of fine Zn nucleation centers on the surface of the Zn metal substrate [29,30]. Consequently, the L-ZMF passivation layer coated Zn metal (Zn@L-ZMF) is an ideally stable Zn metal anode for Zn-based high-performance batteries.…”

Section: Introductionmentioning

confidence: 99%

Stable Zn Metal Anodes with Limited Zn-Doping in MgF2 Interphase for Fast and Uniformly Ionic Flux

et al. 2022

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The practical applications of aqueous Zn metal batteries are currently restricted by the inherent drawbacks of Zn such as the hydrogen evolution reaction, sluggish kinetics, and dendrite formation. To address these problems, herein, a limitedly Zn-doped MgF2 interphase comprising an upper region of pure, porous MgF2 and a lower region of gradient Zn-doped MgF2 is achieved via radio frequency sputtering technique. The porous MgF2 region is a polar insulator whose high corrosion resistance facilitates the de-solvation of the solvated Zn ions and suppression of hydrogen evolution, resulting in Zn metal electrodes with a low interfacial resistance. The Zn-doped MgF2 region facilitates fast transfer kinetics and homogeneous deposition of Zn ions owing to the interfacial polarization between the Zn dopant and MgF2 matrix, and the high concentration of the Zn dopant on the surface of the metal substrate as fine nuclei. Consequently, a symmetric cell incorporating the proposed Zn metal exhibits low overpotentials of ~ 27.2 and ~ 99.7 mV without Zn dendrites over 250 to 8000 cycles at current densities of 1.0 and 10.0 mA cm−2, respectively. The developed Zn/MnO2 full cell exhibits superior capacity retentions of 97.5% and 84.0% with average Coulombic efficiencies of 99.96% after 1000 and 3000 cycles, respectively.

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