Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

Umirzakov, B. E.; Nimatov, S. J.; Boltaev, Kh. Kh.

doi:10.1134/s1027451014030355

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Cited by 8 publications

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“…At present, the composition, structure, and properties of silicon-based films of various thicknesses obtained by various methods are well studied [11][12][13][14][15][16]. Some information has also been obtained on the change in the position of the maxima of the density of electronic states of silicon upon implantation of Ba+ and Na+ ions [17][18].…”

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confidence: 99%

Changes in the electronic structure of the Si surface as a result of ion implantation

et al. 2023

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The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E0<5 keV) Ba+ and O2+ ions have been studied using a set of photoelectron and secondary electron spectroscopy methods. It has been established that in the process of ion implantation, chemical bonds are formed between the atoms of the alloying element and the matrix, the width of the energy bands and the density of electronic states in the bands change.

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