2008
DOI: 10.1103/physrevb.78.184106
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Influence of ion energy and ion species on ion channeling inLiNbO3

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Cited by 7 publications
(3 citation statements)
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“…The defect formation by Si + ion irradiation of LN along crystallographic directions has been investigated by Schrempel et al [126,127]. For the case of low ion energies (<1 MeV for Si + ) it was observed that the nuclear damage maxima were shifted to higher depth for aligned irradiation with respect to those of random incidence.…”
Section: Electronic Damage Dominated Casesmentioning
confidence: 99%
“…The defect formation by Si + ion irradiation of LN along crystallographic directions has been investigated by Schrempel et al [126,127]. For the case of low ion energies (<1 MeV for Si + ) it was observed that the nuclear damage maxima were shifted to higher depth for aligned irradiation with respect to those of random incidence.…”
Section: Electronic Damage Dominated Casesmentioning
confidence: 99%
“…For example, it is generally accepted that electronic excitations in quartz can result in exciton self-trapping that can lead to structural changes upon their annihilation [ 1 , 4 , 5 ]. While the process causing damage is not clear (nuclear stopping power or self-trapped exciton mechanism), we show in Figure 2 c,d that the presented in situ RBS/c set-up enables detailed measurements of the channeling and near-channeling effects influencing ion track formation [ 22 , 49 , 50 ].…”
Section: Experiments and Resultsmentioning
confidence: 99%
“…While the process causing damage is not clear (nuclear stopping power or self-trapped exciton mechanism), we show in Figs. 2c,d that presented in situ RBS/c set-up will enable detailed measurements of the channeling and near-channeling effects influencing ion track formation [MT09], [TS08], [MK17b].…”
Section: Monitoring Ion Track Production In Quartz Sio2 By In Situ Rbs/cmentioning
confidence: 99%