Influence of Irradiation Time on Structural, Morphological Properties of ZnO-NRs Films Deposited by MW-CBD and Their Photodiode Applications

Abstract

Microwave-assisted chemical bath deposition (MW-CBD) was used to deposit zinc oxide nanorods (ZnO-NRs) films by using different microwave irradiation time. The films exhibit a good crystallinity having a hexagonal wurtzite phase formation. Although the dominant preferred orientation was not observed for the ZnO-5 and ZnO-10, ZnO-8 showed (002) preferred orientation. The emission scanning electron microscope (FESEM) showed almost randomly oriented hexagonal nanorods on the surface. A slight decrease in the length of the observed hexagonal nanorods due to the increase in the irradiation time was observed, changing from 550 nm to 300 nm. The p-Si/n-ZnO-NRs heterojunction photodiodes were fabricated. The current-voltage characteristics of these photodiodes were investigated under dark and different illumination intensity. An increase in the reverse current with increasing illumination intensity confirmed that the fabricated photodiodes exhibited a photoconducting behavior. In addition, the barrier height and series resistance values of the photodiodes were determined from capacitance-voltage measurements.

Sol Jel Yöntemiyle Elde Edilen ZnO Filminin Yapısal, Morfolojik ve Optik Özelliklerine Erbiyum Katkısının Etkisi

“…ZnO, n-tipi bir yarıiletken olup, düşük elektriksel dirence, görünür bölgede yüksek optik geçirgenliğe ve geniş optik bant aralığına (E g =3,27eV, oda sıcaklığında) sahiptir [1,2]. ZnO bu özellikleri nedeniyle, elektronik ve optoelektronik uygulamalarda kullanılmaktadır [3][4][5][6][7].…”

Structural Characterization of RF-Sputtered CZTS Thin Films

“…This material is desirable due to the component elements' lowcost and Earth-abundance. The band gap of CZTS is between 1-1.5eV, and the material has an absorption coefficient on the order of 10 4 , both desirable characteristics for use as a photo-absorber in a PV [9]. The primary advantage of using CZTS is that it offsets the drawbacks of silicon, CIGS, and CdTe technologies.…”