2021
DOI: 10.1016/j.ceramint.2021.06.147
|View full text |Cite
|
Sign up to set email alerts
|

Influence of isovalent Cd doping concentration and temperature on electric and dielectric properties of ZnO films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
6
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
8
1

Relationship

3
6

Authors

Journals

citations
Cited by 22 publications
(7 citation statements)
references
References 34 publications
1
6
0
Order By: Relevance
“…The impedance imaginary part values first ascended with the increase in frequency, approached the maximum value, and then descended for all the samples at various temperatures. These observations show that more than one relaxation phenomena are present in our models [66,67].…”
Section: Morphological Analysissupporting
confidence: 57%
“…The impedance imaginary part values first ascended with the increase in frequency, approached the maximum value, and then descended for all the samples at various temperatures. These observations show that more than one relaxation phenomena are present in our models [66,67].…”
Section: Morphological Analysissupporting
confidence: 57%
“…By AC impedance spectroscopy, the impedance of the ZOL3 sensor [expressed as a complex number ( Z * = Z ′ + jZ ″)] was measured in a wide frequency range from 20 Hz to 10 MHz, where the real component Z ′ = Z cos θ represents the resistance and the imaginary component Z ″ = Z sin θ represents the reactance (capacitance and inductance) of the sensor . In these equations, θ = ω RC is the phase shift where ω is the angular frequency, R is the resistance, and C is the capacitance of the sensor .…”
Section: Resultsmentioning
confidence: 99%
“…By AC impedance spectroscopy, the impedance of the ZOL3 sensor [expressed as a complex number (Z* = Z′ + jZ″)] was measured in a wide frequency range from 20 Hz to 10 MHz, where the real component Z′ = Z cos θ represents the resistance and the imaginary component Z″ = Z sin θ represents the reactance (capacitance and inductance) of the sensor. 74 In these equations, θ = ωRC is the phase shift where ω is the angular frequency, R is the resistance, and C is the capacitance of the sensor. 75 When ammonia gas is introduced to the sensor, the impedance curve in the Cole−Cole plot shifted upward (i.e., toward higher impedance values) at 30 °C (Figure 4a), while it shifted downward (i.e., toward lower impedance values) at 150 °C (Figure 4b).…”
Section: Acs Sensorsmentioning
confidence: 99%
“…Thus, the surficial NO sensing features can be understood from the values of activation energies. The rate of resistance change versus temperature for NO target gas can be presumed using the following Arrhenius equation 70 = i k j j j y { z z z R R E kT exp 0 (12) where R is the sensor resistance, K is the Boltzmann factor, T is the temperature (in K), and ΔE is the activation energy. For the estimation of activation energies, the resistance rate change was calculated using the resistance versus time curves on exposure to NO gas with a 100 ppm concentration at different operating temperatures (see Figure S6 in the Supporting Information).…”
Section: Xps Analysismentioning
confidence: 99%