Influence of Laser Annealing of Silicon Enriched SiOx Films on their Electrical Conductivity

Pylypova, O. V.; Antonin, S.; Fedorenko, L.; Muryi, Ya; Skryshevsky, V.; Еvtukh, А.А.

doi:10.1007/s12633-022-01959-2

Cited by 1 publication

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“…Due to the high quality of energy concentration, wavelength, and pulse control, the laser has a high prospect in the fields of information transmission, micro- and nano-processing [ 22 , 23 , 24 ], and so on. Laser annealing, in particular, is a very special kind of heat treatment frequently used for semiconductor devices, showing a quite different way to traditional thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing

Huang,

Liu,

Bao

et al. 2024

Materials

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Organic semiconductors (OSCs), especially small molecule semiconductors, have received increasing attention due to their good designability and variability. Phase transitions and interfacial properties have a decisive influence on device performance. Here, 2-Dodecyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12) devices are treated with low-power laser annealing, which is able to avoid the influence of the dewetting effect on the hole mobility of organic semiconductor materials. Ultraviolet ozone treatment and self-assembled monolayer treatment can improve the performance and stability of the device. Moreover, after low-temperature thermal annealing, the hole mobility of the device can even reach as high as 4.80 cm2 V−1 s−1, and we tested the optical response of the device to the ultraviolet wavelength and found that its maximum optical responsivity was 8.2 AW−1.

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Section: Introductionmentioning

confidence: 99%