Influence of laser spatial parameters and illuminator pupil-fill performance on the lithographic performance of a scanner

Renwick, Stephen P.; Slonaker, Steven D.; Lalovic, Ivan; Ahmed, Khalil

doi:10.1117/12.474524

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…Measurement of the effects of lens aberrations are legion, while several authors 3,4,5 have tried to evaluate the effect of illuminator pupil fills on lithography. Effects of lens NA are easily measured or calculated.…”

Section: Introductionmentioning

confidence: 99%

What makes a coherence curve change?

Renwick

2005

Optical Microlithography XVIII

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With use of OPC on the rise, lithographers have now added coherence behavior to their list of important concerns about an imaging tool. Previously, parameters like nested-to-isolated bias were important. Now, we need to think about the behavior of an entire coherence curve, which is a plot of printed linewidth versus pitch for a set of features at constant reticle linewidth. While the precise shape of a curve may not be especially important, the lithographer will want to know the tool-to-tool variation and whether the curve will change with time. That variation is affected by at least both lens aberrations and illuminator pupil fill, and potentially by other factors as well, like flare or optics contamination. We have made a systematic study of coherence sensitivity to a host of potential factors, and we will present a sensitivity analysis, identifying the big and the small drivers of coherence-curve behavior.

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Section: Introductionmentioning

confidence: 99%

What makes a coherence curve change?

Renwick

2005

Optical Microlithography XVIII

Self Cite

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Pupilgram imperfections and their effect on lithography

Renwick

Slonaker

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

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A simulation performance framework using in situ metrology

Bendik¹,

Yamaguchi²,

Finkner

et al. 2005

Optical Microlithography XVIII

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Modern lithographic simulation engines 1 are quite capable of determining the detrimental impact of source and lens aberrations on low k1 lithographic metrics -given the proper input 2 . Circuit designers, lithographic engineers, and manufacturing facilities would seem to be the beneficiaries of the predictive power of lithographic simulators; however, in-situ methods for accurately determining lens aberrations and source metrology maps have only rather recently been accepted 3 and integrated into practice 4 . For this work, we introduce several new methods for characterizing scanner performance including a high accuracy source metrology tool and integrated simulation engine 5 . We focus attention on the combined detrimental effects of lens aberrations, source non-ideality, distortion, synchronization error, and transmission error on deep sub-wavelength lithographic metrics such as: H-V bias, feature-shift, and ∆CD. After a brief theoretical discussion, we describe a matrix of simulation case studies and present results. Finally, we discuss potential applications for the simulation performance framework and its potential impact to industry.

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Influence of laser spatial parameters and illuminator pupil-fill performance on the lithographic performance of a scanner

Cited by 5 publications

References 3 publications

What makes a coherence curve change?

What makes a coherence curve change?

Pupilgram imperfections and their effect on lithography

A simulation performance framework using in situ metrology

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