Influence of LDD Spacers and H<sup>+</sup>Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

Faccio, F.; Borghello, Giulio; Lerario, Edoardo; Fleetwood, D.M.; Schrimpf, R.D.; Gong, Huiqi; Zhang, En Xia; Wang, P.; Michelis, S.; Gerardin, Simone; Paccagnella, A.; Bonaldo, Stefano

doi:10.1109/tns.2017.2760629

Cited by 87 publications

(39 citation statements)

References 53 publications

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“…Both indicate that the longitudinal electric field has no big influence on the effects of TID on 28-nm bulk MOSFETs. This is different from what is observed for 65-nm bulk MOSFETs from the same foundry [10]. Especially, short-channel MOSFETs fabricated with this 65-nm bulk CMOS technology demonstrate a lower drain current when swapping drain and source.…”

Section: Irradiation and Stress Tests On Transfercontrasting

confidence: 90%

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Zhang

Jazaeri

Borghello

et al. 2018

2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)

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Section: Irradiation and Stress Tests On Transfercontrasting

confidence: 90%

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Zhang

Jazaeri

Borghello

et al. 2018

2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)

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“…However, a brief comparison of the same size of transistors on different chips demonstrates the repeatability of our measurement results. Enclosed-layout transistors are often used for isolating the effects of TID on STI oxides [7], [8]. However, the strict design rules of this commercial 28-nm bulk CMOS process exclude such special structures.…”

Section: Methodsmentioning

confidence: 99%

“…Under the flatband condition, Ψ s and Q m equal to zero. Combining (8) and (9) and following the steps from (3.40) to (3.48) in [32] with the redefined parameters, we obtain the charge-voltage relation:…”

Section: B Utilization Of the Simplified Ekv Mosfet Modelmentioning

confidence: 99%

“…], [6]. However, at ultrahigh TID levels, effects on parasitic oxides, such as shallow trench isolation (STI) oxides and spacer oxides, often dominate the radiation response of nanoscale CMOS technologies [7], [8]. With the perspective of using ultrascaled CMOS technologies in future radiation-tolerant tracking systems, we have been characterizing the radiation tolerance of a commercial 28-nm bulk CMOS process up to 1 Grad(SiO 2 ) of TID [9], [10] and modeling the observed effects for supporting radiation-tolerant circuit designs [11].…”

Section: Introductionmentioning

confidence: 99%

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Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Zhang

Jazaeri

Borghello

et al. 2019

IEEE Trans. Nucl. Sci.

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This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. We introduce a semi-empirical physicsbased approach using only three parameters to model the parallel parasitic and total drain leakage current as a function of TID. Taking into account the gate independence of the drain leakage current at high TID levels, we model the lateral parasitic device as a gateless charge-controlled device by using the simplified charge-based EKV MOSFET model. This approach enables us to extract the equivalent density of trapped charges related to the shallow trench isolation oxides. The adopted simplified EKV MOSFET model indicates the weak inversion operation of the lateral parasitic devices.

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“…Therefore, the effects on thick oxides, such as the shallow trench isolation (STI), dominate the TID response of metal-oxide-semiconductor field-effect transistors (MOSFETs) [10]. Moreover, the charge trapped in the spacer oxide or at its interface modifies the parasitic series’ resistance, reducing the drive current [11].…”

Section: Introductionmentioning

confidence: 99%

3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance

et al. 2018

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In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (STI) of 3.5 × 1012 cm−2. Moreover, it has the advantages of a small footprint, no limitation in W/L design, and a small gate capacitance compared with the enclosed gate layout. Beside the Z gate layout, a non-radiation-hardened single gate layout and a radiation-hardened enclosed gate layout are simulated using the Sentaurus 3D technology computer-aided design (TCAD) software. First, the transfer characteristics curves (Id-Vg) curves of the three layouts are compared to verify the radiation tolerance characteristic of the Z gate layout; then, the threshold voltage and the leakage current of the three layouts are extracted to compare their TID responses. Lastly, the threshold voltage shift and the leakage current increment at different radiation doses for the three layouts are presented and analyzed.

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Influence of LDD Spacers and H⁺Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

Cited by 87 publications

References 53 publications

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance

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Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

Cited by 87 publications

References 53 publications

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance

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Product

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Influence of LDD Spacers and H⁺Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses