We report on the first experimental observations of an anomalous increase in the resistance of a semiconductor-superconductor contact in the vicinity of the critical temperature T. The effect is found in lead-doped InSb thin films having inclusions of lead of 1-3µm in diameter: The observed effect can be a model that explains similar resistance increase observed sometimes in the high 7', superconductors. PACS numbers: 72.2 0.My, 74.50.+r
Sample preparation and characteristicsLead-doped InSb thin films, 2-3 μm thick, were obtained by the coevaporation of InSb and lead from separate sources on ceramic substrates. The film preparation method was essentially the same as that for tin-doped InSb films [1]. The lead content in the films was varied by a change of the Pb-evaporation-source temperature between 950 K and 1250 K. Several films were obtained in one evaporation process. A part of the films from each evaporation un was regrown from the melt by a microzone-melting procedure [1].The electrical properties of the films were investigated with the Hall effect measurements. The morphology and chemical composition of the films were studied with optical microscope observations and selective etchings accompanied with chemical analysis. Further detailed studies of the morphology and chemical composition were carried out with a scanning electron microscope and X-ray microanalyser [1]. The investigation results can be summarized as follows. With-*This paper was presented at