Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories

Maldonado, David; Roldán, A.; González, M.B.; Jiménez-Molinos, F.; Campabadal, F.; Roldán, J.B.

doi:10.1016/j.mee.2019.110983

Cited by 11 publications

(7 citation statements)

References 20 publications

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“…Each memristor consists of a metal/insulator/metal structure in which the conductance of the insulator can be set to different values by applying electrical stresses. [16][17][18] In this type of device, the conductance change is driven by the formation and disruption of a conductive nanofilament across the insulating film, [19][20][21][22][23][24] and in many cases the disruption of the filament (and therefore the reset event) is a thermal effect. [25,26] Therefore, studying the temperature of the memristor with a high lateral resolution (below 100 nm) is very important to understand the functioning of these devices.…”

Section: Resultsmentioning

confidence: 99%

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Liu

Zhu

Hui

et al. 2021

Crystal Research and Technology

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Many groups in academia are having problems patterning interconnections to small electrodes using wire bonding, including metal melting and detachment of previously bonded wires. It is a fact that the industry makes reliable wire bonding using automatic setups and expert personnel, and also that many groups in academia can do wire bonding reliably. However, it is also true that wire bonding is much more problematic than other techniques often employed to pattern interconnections, such as lithography or inkjet printing. In this article, the contact resistance and maximum currents driven by metallic interconnections patterned via wire bonding, lithography, and inkjet printing are compared. It is concluded that interconnections patterned via inkjet printing meet the requirements of many types of experiments, and that inkjet printing is a very cheap and easy-to-use alternative to wire bonding, especially attractive for academics.

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Section: Resultsmentioning

confidence: 99%

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Liu

Zhu

Hui

et al. 2021

Crystal Research and Technology

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“…( 1) to account for the finite difference approximation to the first derivative with excellent results; nevertheless, if the numerical noise was high, a more complex methodology was implemented [47]. It has to be considered that the measurement conditions can complicate this calculation, for instance, high current variations might occur in these devices under the influence of external fields [48] and high temperatures; in these cases, other numerical approaches can do better [47,49,50]. Around the derivative maximum (see Fig.…”

Section: Methods 1 For Set (Ms1) Determination Of the Current Derivat...mentioning

confidence: 99%

Variability Estimation in Resistive Switching Devices, a Numerical and Kinetic Monte Carlo Perspective

Maldonado¹,

Aldana²,

González³

et al. 2022

SSRN Journal

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“…The devices analyzed here were fabricated at the Institute of Microelectronics of Barcelona (CNM-CSIC) [18,20,21] and measured in our laboratory at the University of Granada. A scheme of the structures fabricated and measured is shown in Figure 1a.…”

Section: The Problemmentioning

confidence: 99%

Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes

et al. 2021

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An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on quasi-interpolation on non-uniform partitions. The use of this latter advanced mathematical technique provides a numerically robust procedure, and in this manuscript, we focus on it. The series resistance, an essential parameter to characterize the circuit operation of resistive memories, is extracted from experimental curves measured in devices based on hafnium oxide as their dielectric layer. The experimental curves are highly non-linear, due to the underlying physics controlling the device operation, so that a stable numerical procedure is needed. The results also allow promising expectations in the massive extraction of new parameters that can help in the characterization of the electrical device behavior.

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Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories

Cited by 11 publications

References 20 publications

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Variability Estimation in Resistive Switching Devices, a Numerical and Kinetic Monte Carlo Perspective

Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes

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