Influence of metal work function and incorporation of Sr atom on WO 3  thin films for MIS and MIM structured SBDs

Marnadu, R.; Chandrasekaran, J.; Raja, M.; Balaji, M.; Maruthamuthu, S.; Balraju, P.

doi:10.1016/j.spmi.2018.04.049

Cited by 50 publications

(12 citation statements)

References 42 publications

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“…To study the photo-detector performance of the current device, we calculated many parameters related to the photo-detector including photosensitivity (PS), responsivity (R), current gain (G), specific detectivity (D*) and quantum efficiency (EQE) using the relations. values [30,35,36]. The fabricated photodiode is highly acceptable for the fabrication of p-n photodetector.…”

Section: I-v Characteristics Of P-cuo/n-si Photodiodementioning

confidence: 99%

Impact of Substrate Temperature on Structural, electric and Optical characteristics of CuO Thin Films grown by JNS Pyrolysis Technique

Jhansi¹,

Balasubramanian²,

Chang

et al. 2021

Preprint

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JNS pyrolysis route has been successfully employed to grow CuO thin films at various substrate temperature, ranging from 300 to 600˚C. The XRD analyses revealed the monoclinic phased polycrystalline growth of the samples and exhibited the strong influence of the substrate temperature (ST) on the crystallite sizes. Optical transmission and bandgap studies also showed that sample bandgaps clearly rely upon the growth temperatures. The SEM micrographs displayed the agglomerated growth of particles having golf ball-like structures. The occurrence of Cu and O in the samples were confirmed through EDS analyses. The studies on DC electrical conductivities also shows strong dependency on the ST. A p-CuO/n-Si diode was fabricated at the ST of 600˚C and the diode parameters like barrier height ( ϕb ) and ideality factor (n) were determined under light and dark conditions.

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Section: I-v Characteristics Of P-cuo/n-si Photodiodementioning

confidence: 99%

Impact of Substrate Temperature on Structural, electric and Optical characteristics of CuO Thin Films grown by JNS Pyrolysis Technique

Jhansi¹,

Balasubramanian²,

Chang

et al. 2021

Preprint

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“…For instance, WO 3 is an insulating layer and was employed as an intermediate layer for a metal and semiconductor in an SBD for hydrogen sensing applications [71]. Marnadu et al [40] studied the effect of strontium doping on a Cu/Sr-WO 3 /p-Si Schottky diode. A thin film of strontiumdoped tungsten oxide with various concentrations (0, 4, 8 and 12 wt%) was spray coated onto a p-Si substrate.…”

Section: = -mentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…Furthermore, this is more pronounced at lower temperatures, as can be seen from Figure 28. Since Φ cv B is the mean barrier height which approximately equals to the lateral homogeneous barrier height, as can be seen in [123,225], the measured SBH for SB diode will be related to the measurement method.The presence of one or several of some effects which cause nonideality of the diode parameters can make difficult an accurate determination of the Φ cv B SBH [21,73,200,225,232]. Osvald et al [214] have simulated the forward and reverse biases C − V dependence of inhomogeneous SBDs.They have concluded the results that inhomogeneous SBDs which have the mean BH equal to the BHs of equivalent homogeneous diodes have very similar C − V characteristics and differ merely remarkably only at forward bias, and that the C − V characteristics of both diodes have an exceptional capacitance peak at forward bias, but not at reverse bias; and that the sign of negative capacitance has been not observed, which are appeared by other reasons than a mobile charge carrier redistribution in the semiconductor space charge region.…”

Section: The Capacitance-voltage Characteristics In Schottky Barrier Diodesmentioning

confidence: 99%

“…The current transport mechanism across MS contact depends on the ideality of the fabricated MS junction, and it is determined from the electrical measurements with sample temperature. To fully understand the electrical properties and behavior of a SBD , the experimental electrical measurements must be taken at different sample temperatures and the characteristic diode parameters must be evaluated from these measurements [15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

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Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

100

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It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as "patches" with low barrier placed in a higher uniform barrier area.

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Influence of metal work function and incorporation of Sr atom on WO 3 thin films for MIS and MIM structured SBDs

Cited by 50 publications

References 42 publications

Impact of Substrate Temperature on Structural, electric and Optical characteristics of CuO Thin Films grown by JNS Pyrolysis Technique

Impact of Substrate Temperature on Structural, electric and Optical characteristics of CuO Thin Films grown by JNS Pyrolysis Technique

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

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