Influence of microwave plasma parameters on light emission from SiV color centers in nanocrystalline diamond films

Abstract

Zero phonon line (ZPL) shape, position and integral intensity of SiV defect center in diamond is presented for nanocrystalline diamond (NCD) films grown at different conditions, NCD films of average grain sizes from ~50 nm up to ~180 nm have been deposited onto c-Si wafer at substrate temperature of 700 and 850 o C from mixture with different CH 4 and H 2 ratios using MWCVD process. Light emission of SiV defect center and Raman scattering properties of NCD samples were measured on a Renishaw micro-Raman spectrometer with 488 nm excitation. Scanning electron microscopy images were used for monitoring surface morphology and for the analysis of the average grain sizes. Sample thickness was determined by in situ laser reflection interferometry. Characteristics of SiV ZPL are discussed in light of the morphology, bonding structure and average grain size of NCD films.

Duo Emission of CVD Nanodiamonds Doped by SiV and GeV Color Centers: Effects of Growth Conditions

“…Using this approach, however, the problem of controlling the level of doping of the ND crystal with color centers of different types arises, which determines the spectral and kinetic parameters of the fluorescence of the centers and the possible effects of the interaction of the centers with each other. As was shown in [ 19 , 20 , 21 , 22 ], the luminescence intensity of color centers in CVD diamonds depends strongly on the growth conditions. Therefore, it becomes urgent to study the influence of the growth conditions of NDs doped with different centers and post-synthesis treatment of the ND on optical parameters of luminescence of the embedded color centers.…”