Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs

Wang, Li; Cui, Zhiyong; Huang, Fusheng; Wu, Qin; Li, Wen; Wang, Xiaolan; Mao, Qinghua; Zhang, Jianli; Jiang, Fengyi

doi:10.7567/apex.7.012102

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…In order to have the same wavelength, the growth temperature of InGaN in SQW-LED is lower, 10 °C, than MQW-LED. The grown wafers are processed to vertical N-side up chip structure by using a thin-film approach [13][14][15][16]…”

Section: Methodsmentioning

confidence: 99%

Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures

Wang¹,

Tao²,

Liu³

et al. 2014

Semicond. Sci. Technol.

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Temperature-dependent electroluminescence from InGaN/GaN light-emitting diodes (LEDs) grown on Si (111) are investigated. With the increase of current density, internal quantum efficiencies (IQEs) firstly rise accompanied by full width at half maximum (FWHM) shrinkage and then IQEs droop combined with FWHM broadening are presented. With the decline of temperature, both the maximum of IQEs accompanying the minimum of FWHM shift towards the direction of low current density. Moreover, the maximum of IQEs shift faster than the minimum of FWHM for single quantum well LED. Furthermore, it was found that the quantum well close to n-GaN has priority to radiate in small current injection, especially at low temperature (100 K) for multiple quantum wells LED.

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Section: Methodsmentioning

confidence: 99%

Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures

Wang¹,

Tao²,

Liu³

et al. 2014

Semicond. Sci. Technol.

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“…While miscut wafers have become the de-facto standard for light-emitting diodes grown on sapphire, the situation is not as clear for SiC and Si. There are some publications addressing the influence of wafer miscut on growth on SiC [ 15 , 16 ], sapphire [ 17 , 18 ] and Si [ 19 ], but there are limited data on HEMT structures grown on miscut Si(111) wafers. The paper [ 20 ] reported a gradual improvement in HEMT properties with the miscut angle increased to 1.0 degree, but no analysis was presented.…”

Section: Introductionmentioning

confidence: 99%

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

et al. 2023

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A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.

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Thermal boundary conductance between high thermal conductivity boron arsenide and silicon

Wei

Yang

Liu

et al. 2020

Journal of Applied Physics

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Thermal boundary conductance (TBC) is important for heat dissipation in light-emitting diodes (LEDs). In this study, we predicted the TBC between the high thermal conductivity boron arsenide (BAs) and silicon (Si) by nonequilibrium molecular dynamics (MD) simulations. From the thermal conductivity accumulation function with respect to phonon frequency, the dominant phonon frequencies for heat conduction in BAs are extremely different from those in Si. However, our nonequilibrium MD simulations indicated that the TBC of the BAs/Si interface was still high compared to most other interfaces, even though there was a major frequency mismatch in the thermal conductivity accumulation function between BAs and Si. The primary reason for the high TBC is the overlap of phonon density of states between BAs and Si in the frequency range of 5–8 THz. The range of predicted TBC of the BAs/Si interface was between 200 and 300 MW/m2 K in the temperature range of 300–700 K, and the values of the TBC were not sensitive to the temperature. We also found that the TBCs in Si/BAs and Si/Ge interfaces were close to each other considering the simulation uncertainty. This work indicates BAs as an excellent material for heat dissipation across the interfaces.

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Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs

Cited by 4 publications

References 20 publications

Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures

Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Thermal boundary conductance between high thermal conductivity boron arsenide and silicon

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