Influence of misfit strain on the Goos–Hänchen shift upon reflection from a magnetic film on a nonmagnetic substrate

Abstract

International audienceThe influence of the misfit strain on the lateral shift (Goos–Hänchen effect) experienced by a near-infraredelectromagnetic wave upon reflection from the surface of a bilayer consisting of a magnetic, gyrotropic (i.e., whosepermittivity tensor elements depend upon magnetization) yttrium–iron garnet film deposited on a nonmagneticgadolinium–gallium garnet substrate is investigated theoretically. In the geometry of the transverse magnetoopticalKerr effect, it is shown that the mechanical strain near the geometrical film/substrate interface can inducea significant lateral shift of the beam for incidence angles close to normal incidence, where no shift appears in theabsence of strain. Our calculations demonstrate positive as well as negative values of the lateral shift, depending onthe incident light polarization and on the film thickness. In contrast with that of the misfit strain, the influence ofthe magnetization of the gyrotropic film on the lateral shift is more noticeable for a TM- than for a TE-polarizedwave

Magnetization spin dynamics in a (LuBi)3Fe5O12 (BLIG) epitaxial film

“…A further reduction in cell edges, to 45 nm, did not affect the magnon frequency. We consider the parameters of BLIG to be: saturation magnetization (M s ) as 1.27 × 10 5 A/m [7], uniaxial anisotropy constant (K) as 5.9 × 10 3 J/m 3 [16], exchange constant (A) as 4 × 10 −12 J/m, [17].…”

Goos–Hänchen Shift in Single Crystal Silicon Induced by the Electro‐Optic Effects

“…Many applications based on Goos–Hänchen shifts have been proposed for optical sensors and optical switching . The Goos–Hänchen shift can also be found in electro‐optic structures and can be induced by strain . Recently, E. Timurdogan studied the nonlinear optical effect in silicon waveguides induced by an electric field .…”

Goos-Hänchen effect in light transmission through biperiodic photonic-magnonic crystals

“…The Goos-Hänchen effect consists in the lateral shift of a reflected light beam with respect to the prediction of geometric optics [1]. Nowadays, this effect is intensively studied [2][3][4][5][6][7] in different systems, including anisotropic crystals and magnetic materials [8][9][10][11][12][13][14][15][16], graphene [4,[17][18][19], superconductors [20,21], and photonic crystals (PCs) [19][20][21][22] despite the long history of investigations since the first observation of this phenomenon in 1947 [1]. Some aspects of Goos-Hänchen effect were studied in different structures (see for example recent review papers [23,24]).…”