Influence of monovalent Bi+ doping on real composition, point defects, and photoluminescence in TlCdCl3 and TlCdI3 single crystals

Vtyurina, D. N.; Eistrikh-Geller, P. A.; Кузьмичева, Г. М.; Rybakov, Victor B.; Khramov, Evgeny V.; Kaurova, Irina A.; Chernyshov, Dmitry; Корчак, В. Н.

doi:10.1007/s40843-017-9118-3

Cited by 6 publications

(8 citation statements)

References 37 publications

(36 reference statements)

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“…39,51 In addition to the above two types of emission, ion emission accounts for a large portion in LMHs, originating from d-d transitions of transition metal ions (e.g., Mn 2+ and Cr 3+ ), f-f transitions of trivalent lanthanide ions (e.g., Sm 3+ , Yb 3+ and Er 3+ ), f-d transitions of divalent lanthanide ions (e.g., Eu 2+ and Sm 2+ ), as well as s-p/p-p transitions of bismuth ions, and so forth. [52][53][54][55][56] Tunable luminescence properties of the ion emission can be achieved by adjusting the lattice environment. Moreover, energy transfer can be designed to improve the luminescence efficiency.…”

Section: Typical Electronic Transition Processes In Metal Halidesmentioning

confidence: 99%

Near‐infrared emitting metal halide materials: Luminescence design and applications

Liu,

Dang,

Zhang

et al. 2024

InfoMat

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Near‐infrared (NIR) luminescent metal halide (LMH) materials have attracted great attention in various optoelectronic applications due to their low‐temperature solution‐processable synthesis, abundant crystallographic/electronic structures, and unique optoelectronic properties. However, some challenges still remain in their luminescence design, performance improvement, and application assignments. This review systematically summarizes the development of NIR LMHs through classifying NIR luminescent origins into four major categories: band‐edge emission, self‐trapped exciton (STE) emission, ion emission, and defect‐related emission. The luminescence mechanisms of different types of NIR LMHs are discussed in detail by analyzing typical examples. Reasonable strategies for designing and optimizing luminescence/optoelectronic properties of NIR LMHs are summarized, including bandgap engineering, self‐trapping state engineering, chemical composition modification, energy transfer, and other auxiliary strategies such as improvement of synthesis scheme and post‐processing. Furthermore, application prospects based on the optoelectronic devices are revealed, including phosphor‐converted light‐emitting diodes (LEDs), electroluminescent LEDs, photodetectors, solar cells, and x‐ray scintillators, as well as demonstrations of some related practical applications. Finally, the existing challenges and future perspectives on the development of NIR LMH materials are critically proposed. This review aims to provide general understanding and guidance for the design of high‐performance NIR LMHs materials.image

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Section: Typical Electronic Transition Processes In Metal Halidesmentioning

confidence: 99%

Near‐infrared emitting metal halide materials: Luminescence design and applications

Liu,

Dang,

Zhang

et al. 2024

InfoMat

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“…The initial batch contains a small amount of metallic bismuth taken in proportion BiCl 3 /Bi = 1. During crystal growth by the Bridgman-Stockbarger method, the temperature in the upper zone of the furnace was maintained at 733 K (460 • C) [112]. According to the energy-dispersive X-ray microanalysis, the Tl, Cd and Cl content are 20.11 at%, 17.63 at%, 58.74 at%, respectively.…”

Section: Perovskite Family Compounds and Othersmentioning

confidence: 99%

“…The initial batch for growth of TlCdI 3 :Bi crystal by the Bridgman-Stockbarger method was composed of the TlI, CdI 2 , and BiI 3 iodides taken in a molar ratio of 49.9:49.9:0.2, respectively. Initial components and a small amount of metallic bismuth taken in proportion BiI 3 /Bi = 1 were placed into a quartz ampoule of 20 mm in diameter [112]. All the procedures such as weighing and mixing of components and their placing into a quartz ampoule were carried out in an atmosphere of dry inert gas.…”

Section: Perovskite Family Compounds and Othersmentioning

confidence: 99%

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Peculiar Structural Effects in Pure and Doped Functional Single Crystals of Complex Compositions

Кузьмичева

Kaurova

2020

Molecules

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Results of a detailed structural characterization of nominally pure and doped single crystals of scheelite, eulytin, and perovskite families obtained by melt methods were considered and analyzed. The influence of growth and post-growth annealing conditions on actual compositions of crystals is shown. The reasons for the coloration of the crystals are explained. A change in crystal symmetry due to crystal–chemical and growth reasons is considered. The use of structural analysis and X-ray absorption spectroscopy is substantiated to reveal the role of activator ions in the formation of statistical and local structures, respectively. A relationship between the distribution of activator ions over crystallographic sites and photoluminescent parameters of materials is established, which allows selecting optimal systems for the application. The combined results of studying single-crystal compounds of other classes (huntite, sillenite, whitlockite, garnet, tetragonal bronzes) allow formulating and summarizing structural effects that appeared in the systems and caused by various factors and, in many cases, due to the local environment of cations. A principal difference in the structural behavior of solid solutions and doped compounds is shown. The methodology developed for single-crystal samples of complex compositions can be recommended for the systematic structural studies of functional materials of different compositions.

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“…Different luminescence intensities provide an interesting opportunity to enhance the optical storage potential of the photochromic luminescent materials [50]. Recently, the bismuth ion was extensively used as an active luminescence center [51][52][53][54][55]. In contrast to the rare-earth ions, the bismuth ion has many advantages such as low cost.…”

Section: Introductionmentioning

confidence: 99%

Reversible multiplexing for optical information recording, erasing, and reading-out in photochromic BaMgSiO4:Bi3+ luminescence ceramics

et al. 2020

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Optical data storage technology has many advantages over the traditional solid-state and magnetic storage technology, such as low cost, multi-dimensional storage, and rewritable capability. Therefore, the optical data storage technology has been in increasing demand for optical storage media. Herein, the photochromic and photoluminescence properties of BaMgSiO 4 :Bi 3+ ceramics were investigated. The BaMgSiO4:Bi3+ ceramics showed reversible photochromism from gray to pink upon alternating the 254 nm ultraviolet light and 532 nm laser irradiation. This is caused by the electron trapping and de-trapping in the oxygen vacancies of the BaMgSiO 4 :Bi 3+ host. This reversible behavior of photochromism was applied to fabricate different patterns on the surface of the BaMgSiO 4 :Bi 3+ ceramics, which exhibited the reversible dual-mode optical information recording and erasing abilities. The photoluminescence reversible modulation of the BaMgSiO 4 :Bi 3+ ceramics was obtained through the photochromic phenomenon. This modification behavior of luminescence could be applied to read-out the recording information in the BaMgSiO 4 :Bi 3+ ceramics. The coloration and bleaching of BaMgSiO 4 :Bi 3+ ceramics were dependent on the time of light stimulation, which facilitated multiplexing encoding. This photoluminescence and photochromism multiplexing of the BaMgSiO 4 :Bi 3+ ceramics enhanced the optical data storage capability.

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Influence of monovalent Bi+ doping on real composition, point defects, and photoluminescence in TlCdCl3 and TlCdI3 single crystals

Abstract: ABSTRACT

Cited by 6 publications

References 37 publications

Near‐infrared emitting metal halide materials: Luminescence design and applications

Near‐infrared emitting metal halide materials: Luminescence design and applications

Peculiar Structural Effects in Pure and Doped Functional Single Crystals of Complex Compositions

Reversible multiplexing for optical information recording, erasing, and reading-out in photochromic BaMgSiO4:Bi3+ luminescence ceramics

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