Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Koleske, D. D.; Wickenden, A. E.; Henry, R.L.; Twigg, M. E.

doi:10.1016/s0022-0248(02)01348-9

Cited by 267 publications

(210 citation statements)

References 73 publications

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“…Notably, growth of higher indium compositions requires lower temperatures, which are expected to contribute to higher point defect and impurity concentrations [44]. Thus, for green and longer visible wavelength materials, point defects may play a significantly greater role than for shorter wavelength materials.…”

Section: Point Defectsmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

377

268

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Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

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Section: Point Defectsmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

377

268

View full text Add to dashboard Cite

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“…Further, to controllably incorporate greater concentrations of carbon, the growth pressure is generally lowered and thus potentially changing the native defect level in addition to changing the carbon impurity level or concentration. 22 Despite these shortcomings, experimental results from Seager et al strongly suggest that carbon in MOVCD growth will incorporate as a shallow acceptor when the Fermi level is near the conduction band and will tend to self-compensate otherwise. 21 This explanation is also consistent with the experimental evidence that films grown at low pressure show deep levels and one of these deep levels associated with carbon has been found to cause current collapse in field effect transistor structures.…”

Section: Introductionmentioning

confidence: 99%

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Green

Mishra

Speck

2004

Journal of Applied Physics

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Carbon tetrabromide (CBr 4 ) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation ͓C͔ was found to be linearly related to the incident CBr 4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction were used to characterize the structural quality of the film's postgrowth. No deterioration of structural quality was observed for ͓C͔ from mid 10 17 to ϳ10 19 cm Ϫ3 . The growth rate was also unaffected by carbon doping with CBr 4 . The electrical and optical behavior of carbon doping was studied by co-doping carbon with silicon. Carbon was found to compensate the silicon although an exact compensation factor was difficult to extract from the data. Photoluminescence was performed to examine the optical performance of the films. Carbon doping was seen to monotonically decrease the band edge emission. Properties of carbon-doped GaN are interpreted to be consistent with recent theoretical work describing incorporation of carbon as function of Fermi level conditions during growth.

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“…This is to reduce the rate of indium desorption during growth. This lower temperature has been shown to lead to a higher density of structural defects and impurity incorporation [10,11]. Of particular relevance is evidence that a higher density of point defects is introduced when layers of higher indium content are grown at a reduced temperature [13][14][15][16][17], and these point defects have been shown to act as non-radiative recombination centres [18].…”

mentioning

confidence: 99%

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Hammersley

Kappers

Massabuau

et al. 2016

Phys. Status Solidi C

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In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non‐radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Cited by 267 publications

References 73 publications

Research challenges to ultra‐efficient inorganic solid‐state lighting

Research challenges to ultra‐efficient inorganic solid‐state lighting

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

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