Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

Padma, R.; Balaram, N.; Reddy, I. Neelakanta; Reddy, V. Rajagopal

doi:10.1016/j.matchemphys.2016.04.001

Cited by 17 publications

(3 citation statements)

References 35 publications

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“…where n 0 and μ are the carrier density and effective carrier mobility, respectively; f t is the emission energy from traps; b SE and b PFE are the SE and PFE constants, respectively. The theoretical values of b SE and b PFE for GaN are 1.64×10 −4 eVV −1/2 and 3.28×10 −4 eVV −1/2 cm 1/2 , respectively, whereas they are 1.12×10 −4 and 2.24×10 −4 eVV −1/2 cm 1/2 for ZnO, respectively [38,39]. Figure 4(a) shows the fitting results obtained using the SE model.…”

Section: Resultsmentioning

confidence: 99%

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Kim¹,

Jung²,

Choi³

2022

Phys. Scr.

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In this study, ZnO (10 nm) and TiO2 (2 nm) were grown on a GaN substrate via atomic layer deposition, and the modified properties of Pt/GaN Schottky diodes with ZnO and ZnO/TiO2 interlayers (ILs) were electrically investigated. The barrier height increased with the ZnO and ZnO/TiO2 ILs; however, the ideality increased with the ZnO/TiO2 IL. The reverse-current–voltage characteristics were associated with the Poole–Frenkel emission for all the three junctions. Compared with the Pt/GaN junction, the density of the surface states decreased for the Pt/ZnO/GaN junction but increased for the Pt/ZnO/TiO2/GaN junction. An increase in the ideality factor and a decrease in the barrier height with decreasing temperature were observed at the Pt/GaN and Pt/ZnO/TiO2/GaN junctions. In general, the diode characteristics of the Pt/GaN junction improved owing to the ZnO IL, whereas it degraded owing to the ZnO/TiO2 IL. However, both ZnO and ZnO/TiO2 ILs demonstrate worse diode characteristics at higher temperatures. A thicker ZnO layer (> 10 nm) is suggested for improved thermal stability.

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Section: Resultsmentioning

confidence: 99%

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Kim¹,

Jung²,

Choi³

2022

Phys. Scr.

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“…Nanostructures, owing to their interesting properties and higher surface to volume ratio, have attracted the attention of many researchers. As reported in thin-film nanostructures [41,108], they can be used effectively as interfacial layers in MOS Schottky diodes. The grains and grain boundaries at the interface can significantly affect the Schottky diode properties.…”

Section: Future Directionsmentioning

confidence: 92%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…It is this feature that is responsible for the exceptional characteristics of the Schottky diode. The electrical characterization (Schottky contact, the current-voltage measurement, the capacitance measurement and series resistance measurement) of Schottky diodes based on the InP and InN components has been the subject of several recent studies [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different Diameters

Bey

Talbi

Berka

et al. 2020

J. Nano- Electron. Phys.

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Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

Cited by 17 publications

References 35 publications

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different Diameters

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Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

Cited by 17 publications

References 35 publications

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO2/ZnO interlayers

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO2/ZnO interlayers

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different Diameters

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Product

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Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers