Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

Abstract

Gallium oxide and more particularly β-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

Influence of Nd dopant amount on microstructure and photoluminescence of TiO2:Nd thin films

“…First, the PL intensity increases with the dopant amount and reaches its maximum at 2 at.% but further increase of neodymium amount in titania caused its rapid decrease. For the Nd concentration in the range from 0.6 to 2.0 at.% the emission lines are narrower and characterized by Stark effect [1].…”

“…Doping or co-doping of semiconducting materials with selected rare earth (RE) ions have already been proven to be an efficient way for obtaining infrared light emission [1]. The exceptional properties of RE like, for example, emission with a narrow band and stable wavelength, are due to their optical transitions taking place among internal 4f orbitals that are shielded from the environment by 5d-orbital electrons.…”

“…The emission efficiency can be increased by excitation sensitizing by incorporation of additional donor center i.e. matrix, defect states or nanocrystals [1]. Among different REs, especially Nd 3+ ions have attracted a considerable interest because of their industrial application in solid-state lasers due to the effective 4 F 3/2 ?…”

Texture effect of neodymium doped gallium oxide thin films on their optical properties

“…Photoluminescence measurements revealed the neodymium efficiency in the Ga 2 O 3 matrix. In addition, Podhorodecki et al proposed recently mechanisms of emission in Ga 2 O 3 :Nd 3+ [23].…”

The microstructure and photoluminescence properties of Eu3+ -doped SiO2 -ZnO-Ga2 O3 composite

“…Its wide bandgap enables modification of the luminescence properties by the incorporation of suitable ions. Recently, rare-earth (RE) ion-doped Ga 2 O 3 nanoparticles have been reported by several groups [4,[8][9][10]. In particular, the nanoparticles doped with Eu 3þ ions have attracted extensive attention because the major emission band is centered near 612 nm, which is one of the three primary colors [3,4].…”