Influence of NH3 gas for GaN epilayer on β-Ga2O3 substrate by nitridation

Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction

“…It is considered that the combination between ␤-Ga 2 O 3 and GaN is more promising than that between ␤-Ga 2 O 3 and SiC. There have been some studies on GaN prepared on ␤-Ga 2 O 3 single crystals [6,7]. Two crystals of GaN and ␤-Ga 2 O 3 can be grown with an epitaxial relation to each other, even though GaN has the wurtzite structure and ␤-Ga 2 O 3 is a monoclinic structure.…”

Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

“…[4][5][6][7] Recently, GaN epilayers, nanotubes, and nanobelts have been produced by this method. [8][9][10][11] In addition, bulk GaN crystals have been synthesized by carbothermal reduction and nitridation of β-Ga 2 O 3 by NH 3 . [12][13][14][15] These results indicate that the nitridation of Ga 2 O 3 by NH 3 is an important method for fabricating GaN materials.…”

The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth

“…The temperature of the substrates was increased to higher than 500 • C and thermally annealed for 10 min in ambient N 2 . This thermal treatment is a common technique for removing contaminants from the substrates, repairing the residual polishing damage, and terracing the surface morphology of the substrate [34,35]. With the change in surface morphology, an effect similar to a patterned substrate occurs, so that the threading dislocations are significantly suppressed by epitaxial lateral overgrowth (ELOG) [36].…”

“…Therefore, a β-Ga 2 O 3 wafer becomes a potential candidate as a substrate for GaN-based devices. To date, various efforts have been made to improve the quality of GaN epilayers on β-Ga 2 O 3 , such as growing AlN (aluminium nitride) as a buffer layer [29,30], adapting SiN x patterns on the substrates to reduce threading dislocations [31], growing a thin GaN or AlGaN as a nucleation layer for following GaN epilayer growth [32][33][34], or adjusting the NH 3 gas flow rate to control the thickness of the GaN epilayer [35,36]. The last two investigations show the potential to directly grow epitaxial GaN layers on β-Ga 2 O 3 substrates without additional interlayer layers or pre-patterning processes, which can further simplify device fabrication processing.…”