Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiN_x‐Based Resistive Random Access Memory

Abstract

The characteristics and conductive mechanism of Ta/SiN x /Ta:SiN x /SiN x /Pt resistive random access memory (RRAM) are investigated. Compared with Pt-doped devices with the same structure, the Ta-doped devices produce lower operation current in a high resistance state and a larger on/off radio. Furthermore, reliability tests show that the Ta-doped RRAM has good data retention ability and endurance. Ta clusters are observed in the Ta-doped SiN x layer through the transmission electron microscope. Also, the X-ray photoelectron spectra indicate that additional Si dangling bonds and tantalum nitride are present in the Ta-doped SiN x film. Based on the structure of the device, material analysis, and electrical characteristics, a model is proposed to explain the influence of the doped Ta on resistive switching behavior of the device.

Barium oxide write-once read-many-times memory with a high resistance window

“…Eqn (2) suggests that the validity of the Schottky mechanism can be confirmed by examining the linearity of a graph. 29 Fig. 10(a) clearly shows a linear relationship, which is consistent with the prediction of eqn (1).…”

Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering

“…In order to understand the difference of AlO x CL effect between dopant-free HfO x and doped-HfO x films, the HfZrO x MFM capacitors with different CL thicknesses were also carried out for a performance comparison. From thermodynamic analysis, the Gibbs free energies for ZrO 2 , HfO 2 , Al 2 O 3 and TaN are -1100 kJ/mol, -1010.8 kJ/mol, -1500 kJ/mol, and -604.96 kJ/mol, respectively [23], [24]. We can understand that the interface reaction at the TaN/HfO x and TaN/ZrO x interface is more significant than that of TaN/AlO x interface.…”

Influence of the Position of Local Ta Doping in SiNx Resistive Random Access Memory

“…We reported that SiN x ‐based RRAM locally doped with Ta in the middle of the dielectric layer has high on/off radio characteristics. [ 22 ]…”

“…We reported that SiN x -based RRAM locally doped with Ta in the middle of the dielectric layer has high on/off radio characteristics. [22] A recent study has shown that doping at different positions in the oxide RS layer affects device performance. [23] Since typical conductive channels have a tapered structure, local doping of metals in the RS layer can make a more regular concentration of connections and disconnections of CFs locally, improving the device's performance.…”