2022
DOI: 10.1007/s00339-022-05501-4
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Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering

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Cited by 39 publications
(8 citation statements)
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“…In contrast to conventional metal oxide semiconductors, , two-dimensional (2D) materials have drawn tremendous attention owing to their high specific surface area and high electrical response to gas environments, which are the key characteristics for applications in chemical sensing. After discovering graphene and acquiring its extraordinary properties, 2D group III nitrides also show high thermal stability and exceptional electron mobility, making them an archetypal candidate in gas sensing applications. In addition, Mortazavi et al , used machine learning interatomic potentials to demonstrate that two-dimensional materials have excellent mechanical properties.…”
Section: Introductionmentioning
confidence: 99%
“…In contrast to conventional metal oxide semiconductors, , two-dimensional (2D) materials have drawn tremendous attention owing to their high specific surface area and high electrical response to gas environments, which are the key characteristics for applications in chemical sensing. After discovering graphene and acquiring its extraordinary properties, 2D group III nitrides also show high thermal stability and exceptional electron mobility, making them an archetypal candidate in gas sensing applications. In addition, Mortazavi et al , used machine learning interatomic potentials to demonstrate that two-dimensional materials have excellent mechanical properties.…”
Section: Introductionmentioning
confidence: 99%
“…The absorption spectra were measured using a UV-Vis spectrometer (Shimadzu) with a resolution of 0.1 nm. The optical band gap was estimated using equation (1) and according to the Planck formula as follows [ 60 , 61 , 62 , 63 , 64 , 65 ]: where h is the Planck constant (6.62617 × 10 −34 J·s), c is the velocity of light (2.9979 × 10 8 m/s), and λ represents the absorption limit wavelength (nm), achieved from the onset of the absorption graph [ 60 , 61 , 62 , 63 , 64 , 65 ]. The visualization of the surface morphology of the layers was done using atomic force microscopy (AFM, Veeco CP-II) in contact mode with a scanning frequency of 1 Hz and points in Si and Shimadzu-type scanning electron microscopy (SEM, Superscan SSX-550).…”
Section: Experimental and Theoretical Studiesmentioning
confidence: 99%
“…The sputtering methods of the electrode fabrication procedure have been reported previously. [25][26][27] The rf-sputtering instrument provides some advantages such as uniform thickness and dense coatings with a high deposition rate, which have been previously reported for thin layer deposition of ZrO 2 , TaN and In 2 O 3 , for developing electrodes of capacitors. [25][26][27] In order to fabricate the electrodes of the capacitor, an Al thin film was deposited onto glass substrates (1.0 Â 1.0 Â 0.2 cm) using an rf-sputtering instrument (Desk Sputter Coater DST3, Nano-Structured Coatings Co. Iran).…”
Section: Electrode Preparationmentioning
confidence: 99%
“…[25][26][27] The rf-sputtering instrument provides some advantages such as uniform thickness and dense coatings with a high deposition rate, which have been previously reported for thin layer deposition of ZrO 2 , TaN and In 2 O 3 , for developing electrodes of capacitors. [25][26][27] In order to fabricate the electrodes of the capacitor, an Al thin film was deposited onto glass substrates (1.0 Â 1.0 Â 0.2 cm) using an rf-sputtering instrument (Desk Sputter Coater DST3, Nano-Structured Coatings Co. Iran). As the first step, the treatment process of glass samples was started by washing substrates with acetone and ethanol under ultrasonic conditions at room temperature (RT) for 20 minutes.…”
Section: Electrode Preparationmentioning
confidence: 99%