Influence of nitrogen incorporation on structural, electronic and magnetic properties of Ga1−xMnxAs

Kling, Rainer; Köder, A; Schoch, W.; Frank, S.; Oettinger, Marcel; Limmer, W.; Sauer, R.; Waag, A.

doi:10.1016/s0038-1098(02)00483-0

Cited by 9 publications

(7 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The nitrogen incorporation made the T c slightly higher than for GaMnAs films in the range of low Mn concentration. This result follows the reports by Kling et al [13], they also observed a slightly higher T c for nitrogen incorporated GaMnAs films. Another notable feature in Fig.…”

Section: Resultssupporting

confidence: 93%

“…Kling et al achieved a slight T c increase with a low nitrogen concentration of about 1% [13]. In the higher range of nitrogen concentrations, over about 2%, the T c of GaMnNAs was lower than that of GaMnAs [13]. Oshiyama et al [14] also reported a lower T c for GaMnNAs.…”

Section: Introductionmentioning

confidence: 96%

“…With increasing the nitrogen concentration the GaMnNAs films change from metal like to insulating like, which suggests that a high nitrogen doping can reduce the T c as reported in Refs. [13,14].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Molecular beam epitaxy and magnetic properties of GaMnNAs

Kobayashi¹,

Mori²,

Kato³

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 96%

See 1 more Smart Citation

Molecular beam epitaxy and magnetic properties of GaMnNAs

Kobayashi¹,

Mori²,

Kato³

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

“…An MIT is also observed when Ga 1-x Mn x As is alloyed with N as shown in Figure 2 a much stronger effect on electrical transport than P. We emphasize that in both alloys these MITs are driven by the incorporation of isovalent species while the Mn Ga doping concentration is held at a constant value. Additionally, the electrical behavior of our Ga 1-x Mn x As 1-y N y samples is similar to those reported for LT-MBE-grown films [19][20][21] .…”

supporting

confidence: 85%

Metal-Insulator Transition by Isovalent Anion Substitution inGa1−xMnxAs: Implications to Ferromagnetism

et al. 2008

View full text Add to dashboard Cite

We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4% As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature T_{C} from 113 to 60 K (100 to 65 K) upon the introduction of 3.1% P (1% N) into the As sublattice.

show abstract

“…This hypothesis is also supported by scanning tunneling microscopy of the Ga 1Àx Mn x As surface [7] and by the capping-induced suppression of the annealing effect [8]. A number of attempts have been made to enhance T C by combining the lowtemperature annealing process with specific sample design such as Be modulation doping [9], N doping [10], or growth of Mn d-doped GaAs layers [11]. Here, we explore a promising alternate route toward the control of Mn I defects in Ga 1Àx Mn x As By carrying out epitaxial growth on strain-relaxed In 0.12 Ga 0.88 As templates with a rippled surface morphology.…”

mentioning

confidence: 82%

Enhancement of Curie temperature in Ga1−xMnxAs epilayers grown on cross-hatched InyGa1−yAs buffer layers

Maksimov

Sheu

Xiang

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Relaxed In y Ga 1Ày As epilayers grown on (0 0 1) GaAs are known to exhibit a cross-hatched surface with ridges running along the [1 1 0] and ½1 % 1 0 directions. We find that Ga 1Àx Mn x As epilayers grown on such buffer layers can have as-grown Curie temperatures (T C ) that are higher than the as-grown 110 K value typical of Ga 1Àx Mn x As/GaAs heterostructures. Further, low-temperature annealing leads to only modest additional increases in T C ; contrasting with the behavior in Ga 1Àx Mn x As/GaAs where T C typically increases significantly upon annealing. Our observations suggest that the initial concentration of Mn interstitials in as-grown Ga 1Àx Mn x As /In y Ga 1Ày As heterostructures is smaller than that in as-grown Ga 1Àx Mn x As/GaAs heterostructures. We propose that strain-dependent diffusion may drive Mn interstitials from the bulk of the growing crystal to more benign locations on the ridged surface, providing a possible route towards defect-engineering in these materials. r

show abstract

Influence of nitrogen incorporation on structural, electronic and magnetic properties of Ga1−xMnxAs

Cited by 9 publications

References 9 publications

Molecular beam epitaxy and magnetic properties of GaMnNAs

Molecular beam epitaxy and magnetic properties of GaMnNAs

Metal-Insulator Transition by Isovalent Anion Substitution inGa1−xMnxAs: Implications to Ferromagnetism

Enhancement of Curie temperature in Ga1−xMnxAs epilayers grown on cross-hatched InyGa1−yAs buffer layers

Contact Info

Product

Resources

About