Influence of O and C co-implantation on the lattice site of Er in GaN

Vries, Bart de; Matias, V.; Vantomme, André; Wahl, Ulrich; Rita, E.; Alves, E.; Lopes, A. M. L.; Correia, J. G.

doi:10.1063/1.1756196

Cited by 14 publications

(10 citation statements)

References 17 publications

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“…This demonstrates that the broadening of the experimental emission channeling effects can be explained quantitatively by the mosaicity of the layer, as determined with XRD. Note that in a similar experiment with 167m Er implanted into a GaN film, 13,14 an almost perfect agreement was found between the experiment and the theoretical simulations assuming a perfect crystal. However, for that particular sample the tilt (0.08…”

Section: Figures 3 (A)-(d) Show the Normalized Angular Emission Yieldsupporting

confidence: 64%

“…More information on emission channeling experiments with the probe 167m Er in GaN and Si can be found in references. [12][13][14] From the random RBS spectrum, a thickness for the top AlN layer of 3500Å was deduced, while the buffer layer consists of Al 0.2 Ga 0.8 N with a thickness of 5500Å. Table I lists the experimentally determined half-angles ψ 1/2 and minimum yields χ min for channeling along three different crystal axes in AlN.…”

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confidence: 99%

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Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

Vries

Wahl

Ruffenach

et al. 2013

Applied Physics Letters

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Using the electron emission channeling and Rutherford backscattering/channeling techniques, the influence of the mosaicity of a thin film on the axial channeling of charged particles was investigated. It is found that crystal mosaicity leads to a broadening and a degradation of the experimental channeling effects. This phenomenon, which is shown to be of major importance when assessing the lattice site of impurities in a single crystal, can be modeled quantitatively by using the mosaic tilt and twist components derived from X-ray rocking curve scans. As a case study, we illustrate that our approach allows to accurately determine the lattice site of Er in AlN, despite the significant influence of mosaicity on the channeling measurements.The channeling of charged particles is widely used to investigate single-crystalline materials. In combination with ion beam techniques such as Rutherford backscattering spectrometry (RBS), particle-induced X-ray emission (PIXE) or nuclear reaction analysis (NRA), ion channeling is a powerful tool to examine the crystal quality of such materials, or to obtain direct information on the lattice sites occupied by impurities. One particularly sensitive lattice location technique is emission channeling (EC), which is based on the channeling of charged particles emitted in the decay of radioactive impurities.

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Section: Figures 3 (A)-(d) Show the Normalized Angular Emission Yieldsupporting

confidence: 64%

mentioning

confidence: 99%

Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

Vries

Wahl

Ruffenach

et al. 2013

Applied Physics Letters

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“…Er implanted in GaN is compared in Figure 3 with a simulation of EC from the substitutional site Er Ga [11]. To summarise a large number of studies performed to date, all implanted RE studied so far prefer substitutional Ga/Al/In sites [10-12 and refs therein].…”

Section: An Experiments On 167mmentioning

confidence: 99%

Site Multiplicity of Rare Earth Ions in Iii-Nitrides

et al. 2004

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This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE 3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the RE Ga defect.

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“…We therefore also investigated the lattice sites of 167m Er in two GaN samples that were pre-implanted with O and C. Our results [Fig. 4 (i)-(k)] show that the presence of O and C, even if it exceeds the RE concentration by a factor of 14, has no effect on the lattice site of 167m Er in GaN [47].…”

Section: Rare Earths In Nitrides and Znomentioning

confidence: 92%

“…In addition we used the isotope 147 Nd, which allows to do lattice location studies of both the β − emitting mother 147 Nd and CE emitting daughter 147* Pm [44,46]. An additional experiment with CE from 167m Er was done on virgin GaN and GaN co-implanted with O or C [47].…”

Section: Rare Earths In Nitrides and Znomentioning

confidence: 99%

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

Wahl¹,

Correia²,

Rita³

et al. 2005

Hfi/Nqi 2004

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Abstract. We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.

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Influence of O and C co-implantation on the lattice site of Er in GaN

Cited by 14 publications

References 17 publications

Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

Site Multiplicity of Rare Earth Ions in Iii-Nitrides

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

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