Influence of O2 flow rate on the characteristics of TiO2 thin films deposited by RF reactive sputtering

Tunable structure of TiO2 deposited by DC magnetron sputtering to adsorb Cr (VI) and Fe (III) from water

“…This was true for films deposited at the highest (3.47 Pa) and lowest (0.47 Pa) working pressures, which showed peaks at different 2θ positions. In contrast, the films obtained at pressures of 1.27 and 2.13 Pa had amorphous structures, which are common in sputtering deposits over glass substrates [ 32 , 42 , 49 , 50 ]. For this reason, a Rietveld refinement was performed to determine the lattice parameters and the phases resulting from the deposition conditions ( Table S3 ).…”

“…Deposition of thin films via sputtering is a great option for modifying the structural properties of semiconductors, and it is possible to explore the depositional conditions to change the final properties of the film. With the sputtering technique, changing the amount of carrier gas inside the chamber, the gases used in the deposit, the power density, and the working pressure for deposition is feasible [ [31] , [32] , [33] , [34] ]. Among these parameters, the working pressure is one of the best options for modifying the structural, optical, and morphological properties of thin films, as the ionization levels of the species inside the chamber increase with increasing working pressures [ 35 , 36 ].…”

“…The working pressure affects the path and energy through which the material species collide with the substrate inside the chamber, giving rise to preferential planes in the crystalline structure [ 35 , [37] , [38] , [39] ]. However, the presence of more than two TiO 2 phases is very common even with changes in the deposition conditions (see Table S2 ) [ [32] , [33] , [34] , [40] , [41] , [42] , [43] , [44] , [45] , [46] , [47] , [48] , [49] ].…”

A Study on the Characteristic and Antibacterial Activity of Ti3Ox Thin Films

“…It is challenging to know the energy bandgap value for the Ti 3 O x films, while TiO 2 has an indirect bandgap with a value around 3.0-3.2 eV [24]. However, Ti 3 O and Ti 3 O 5 are still unknown.…”

“…The reactive sputtering method is typically characterized by the target's composition, influencing the sputtering yield and secondary electron emission coefficient that vary between Ti metal and TiO 2 films [21]. Moreover, besides the elemental coefficients, deposition condition parameters, such as sputtering power, will influence thin films' structure, composition, and photocatalytic properties [22][23][24][25].…”