Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂18 nm PMOS

Abstract

Abstract. Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO 2 was used as the gate dielectric ad TiO 2 was used as the gate material. The transistor HfO 2 /TiSi 2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method's practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source-drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO 2 /TiSi 2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations) and noise factors were evaluated by examining the Taguchi's signal-to-noise ratio (SNR) and nominal-the-best for the threshold voltage (VTH). After optimization, the result showed that the VTH value of the 18-nm PMOS device was -0.291339.

Analysis the Effect of Control Factors Optimization on the Threshold Voltage of 18 nm PMOS Using L27 Taguchi Method

“…In this research, the optimization process by using orthogonal array L27 Taguchi method needs only five important control factors to be considered in the design of experiments with interaction. In the previous experiment, which studies the process by using an orthogonal array L9 it can be conclude that the Source/Drain Implantation is selected as dominant factor [11]. So this study proves that the Source/Drain implantation dose is as factor E. So in the orthogonal arrays L27 study, it aimed to investigate the relationship of interaction factor E with other control factors.…”

“…The important of the interaction study is to identify which control factor has interaction with the key factor during the optimization process is carried out. The key factor (factor E) is selected from optimization process using orthogonal array L9 Taguchi method [11]. This is because the experimental study of Taguchi method with orthogonal array L9 only shows the dominant factor and adjustment factors without showing the impact of the interaction.…”