2022
DOI: 10.2298/fuee2201001t
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Influence of oxide thickness variation on analog and RF performances of SOI FinFET

Abstract: This paper focuses on the impact of variation in the thickness of the oxide (SiO2) layer on the performance parameters of a FinFET analysed by varying the oxide layer thickness in the range of 0.8nm to 3nm. While varying the oxide layer thickness, the overall width of the FinFET is fixed at a value 30nm, and the FinFET parameters are analysed for structures with different oxide layer thickness. The parameters like drain current, transconductance, transconductance generation factor, parasitic … Show more

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Cited by 7 publications
(3 citation statements)
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“…Throughout the years, the investigation of NBTI has attracted significant aca attention, as proven by the group of authors who have contributed to this field [1 NBTI is investigated across a spectrum of semiconductor components, including Fin integrated circuits (ICs), where the effect can impact the reliability and performa digital and analog circuits. Of particular relevance to this review were power VD transistors [16][17][18]. Several experimental methods have been developed to obtain a priate experimental data [15,21].…”
Section: Experimental Methodsmentioning
confidence: 99%
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“…Throughout the years, the investigation of NBTI has attracted significant aca attention, as proven by the group of authors who have contributed to this field [1 NBTI is investigated across a spectrum of semiconductor components, including Fin integrated circuits (ICs), where the effect can impact the reliability and performa digital and analog circuits. Of particular relevance to this review were power VD transistors [16][17][18]. Several experimental methods have been developed to obtain a priate experimental data [15,21].…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Throughout the years, the investigation of NBTI has attracted significant academic attention, as proven by the group of authors who have contributed to this field [15][16][17][18][19][20][21]. NBTI is investigated across a spectrum of semiconductor components, including FinFETs, integrated circuits (ICs), where the effect can impact the reliability and performance of digital and analog circuits.…”
Section: Polarization Of the Gate Of Vdmos Transistors Nmos Pmosmentioning
confidence: 99%
See 1 more Smart Citation