2004
DOI: 10.1016/s0955-2219(03)00453-9
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Influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films

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Cited by 49 publications
(14 citation statements)
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“…In PTD process, we used a mixture of polyol precursor solution of metal chlorides (i.e., 0.2 M of barium chloride (BaCl 2 Á2H 2 O, Showa, 99%) and 0.2 M of titanium tetrachloride (TiCl 4 , Aldrich, 99.9%) with sparingly soluble metal salts in water) with deionized water and ethylene glycol as a solvent under ambient conditions without the need for refluxing to grow the BaTiO 3 film. The preparation of polyol precursor solution is similar to the polyol process [15,16], using diol or polyalcohol (for example, ethylene glycol or glycerol) as a solvent to reduce metal salts to metal particles, and the Pechini process [17,18], except that citric acid or other chelating agents are not utilized. The polyol precursor solution also ensures a homogeneous metal distribution and prevents unwanted reaction that can lead to the formation of undesired phases.…”
mentioning
confidence: 99%
“…In PTD process, we used a mixture of polyol precursor solution of metal chlorides (i.e., 0.2 M of barium chloride (BaCl 2 Á2H 2 O, Showa, 99%) and 0.2 M of titanium tetrachloride (TiCl 4 , Aldrich, 99.9%) with sparingly soluble metal salts in water) with deionized water and ethylene glycol as a solvent under ambient conditions without the need for refluxing to grow the BaTiO 3 film. The preparation of polyol precursor solution is similar to the polyol process [15,16], using diol or polyalcohol (for example, ethylene glycol or glycerol) as a solvent to reduce metal salts to metal particles, and the Pechini process [17,18], except that citric acid or other chelating agents are not utilized. The polyol precursor solution also ensures a homogeneous metal distribution and prevents unwanted reaction that can lead to the formation of undesired phases.…”
mentioning
confidence: 99%
“…It is seen from Table 1 that the thermal annealing leads to a decrease in the relaxation time of the "slow" relaxation process, which seems to be conditioned by the influence of the grain boundaries in the LiNbO 3 film. As it has been proposed [12] , vacancies appearing inevitably in the LiNbO 3 film during the growing process play a crucial role in the relaxation process. For example, the oxygen vacancies (positive charges) may have originated from the sputtering process of the film and can be associated with bulk properties of the film.…”
Section: Impedance Spectroscopymentioning
confidence: 91%
“…It is important to emphasize that relaxation phenomena underlie many electrical properties of the ferroelectric film and can even block switching process, which is the stumbling block of the contemporary electronics. From this point of view, various approaches, such as optimization of the sputtering parameters [12] , doping [13] and annealing [14] have been applied to obtain the desired result in switching of the ferroelectric devices. Consequently, there is no doubt that investigation of the relation between the structure of the grown films and their relaxation properties is urgent.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, while bulk crystals generally require reducing atmospheres [52] or vacuum [53] for significant oxygen to diffuse out of the crystal matrix during annealing, we found that in small crystallites the out diffusion occurs even when annealed in an ambient atmosphere, resulting in black powders. To prevent the loss of oxygen from the material, we annealed the powders under a continuous flow of oxygen (ultra-high purity grade), a method that has been shown to inhibit the reduction process for bulk crystals [53], although for thin films there have been some indications that excess oxygen may potentially be absorbed and produce defects [54]. To inhibit the out-diffusion of lithium, we employed the well-known technique used for LiNbO 3 wafer processing of introducing small amounts of water vapor into the oxygen by bubbling the gas through a column of deionized water [55,56].…”
Section: Sample Preparationmentioning
confidence: 99%