Influence of oxygen content of room temperature TiO_2−x deposited films for enhanced resistive switching memory performance

The effect of annealing temperature on resistive switching behaviors of HfOx film

“…Such kind of current transport mechanism has been well illustrated by spacecharge-limited current (SCLC) effect [4,22]. According to Bousoulas's study [9], it is believed that the distinct RS behaviors mainly originate from the variation of intrinsic defects (oxygen vacancy) in the film due to thermal annealing process. The as-deposited sample was in substoichiometric state due to the nonuniform reaction during deposition, which results in the random filaments in the film.…”

“…Among the proposed models [3][4][5][6][7], conductive filament seems to attract remarkable attention as the origin of RS due to its applicability on a wide range of materials and the existence of indisputable experimental clues [8]. It is reported that oxygen vacancies are possible filaments [9]. Thus the random RS can be improved by modulating the oxygen vacancies in the film.…”

Nanogenerator-induced synaptic plasticity and metaplasticity of bio-realistic artificial synapses

“…In general, the resistance of the memristor containing conducting filaments is determined by the diameter or thickness of the filament. 39 The priming D-spike reduced the thickness of the conducting filaments without rupturing those filaments, which resulted in only a slight decrease in the current of the NKN memristor. On the other hand, when a D-spike was applied after a priming D-spike (state IV), the NKN memristor exhibited insulating properties, which indicates that the conducting filament had ruptured.…”

Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

“…This shows the decrease of the oxygen vacancy concentration and the increase of the content of Ta 2 O 5 . These cases led to a smaller size of vacancy based filaments when the devices were in LRS [26].…”