Influence of oxygen incorporation on infrared transmission of ternary Ge-Sb-Se chalcogenide glass in the compositional range for use in infrared-imaging applications

Lee, Jun Ho; Kim, Hyun; Yoon, Il Jung; Lee, Ji In; Ko, Se Young; Choi, Yong Gyu

doi:10.1016/j.ceramint.2021.09.001

Cited by 7 publications

(1 citation statement)

References 19 publications

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“…Amorphous chalcogenide glasses (ChGs) are gaining interest due to their diverse optical and electronic applications, including memory switching devices, optical data storage, IR communication systems, solar cells, and linear and nonlinear integrated optical elements [1][2][3]. Phase-change memories (PCMs) are one of the most promising applications of ChGs, as they have two distinct structural forms: amorphous and crystalline [4,5].…”

Section: Introductionmentioning

confidence: 99%

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

El-Metwally,

Ismail

2023

Phys. Scr.

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Quaternary (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass was synthesized using melt-quenching and thermal evaporation techniques for bulk and thin film samples, and its amorphous character was confirmed by XRD. Based on different models of non-isothermal crystallization kinetics, the average values of the glass transition E ̅ g and the crystallization E ̅ c activation energies are 121.33 and 82.94 kJ mol−1, respectively. The crystallization mechanism in the examined composition is 2D nucleation growth, according to Avrami exponent n . Thermal parameters of the studied quaternary glass, like fragility F g , fluctuation free volume F FV , reduced glass transition temperature T rg , thermal stability SP and glass formation ability GFA were investigated and indicated that the (Tl20Se70Ge10)0.85Sb0.15 ChG exhibits a good ability of glass formation and thermal stability. The obtained results of the dc electrical conductivity σ dc are found to increase with temperature and decrease with film thickness. The electrical conduction activation energy ∆ E σ (0.583 ± 0.004 eV) is thickness independent and the predominant conduction mechanism is the hopping of charge carriers in the band tail localized states. The ( I – V ) curves of (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass film samples were analyzed and shown to be appropriate for a memory switch. The mean value of the threshold voltage V ̅ th decreases exponentially as temperature increases, whereas it increases linearly as film thickness increases. The values of threshold voltage ε th and threshold resistance ∆ E R activation energies are 0.282 ± 0.003 and 0.521 ± 0.004 eV, respectively. The obtained switching characteristics data were discussed in view of the electrothermal model motivated by current channel Joule heating. These findings highlight the suitability of the investigated composition for various optoelectronic applications, such as memory switching devices, optical data storage, phase-change memories and optical fibres sensing devices.

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Section: Introductionmentioning

confidence: 99%

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

El-Metwally,

Ismail

2023

Phys. Scr.

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Obtaining ultra-high hardness in spark plasma sintered Ge40As40Se20 bulk glass

Xie,

Gu,

Jia

et al. 2024

Infrared Physics & Technology

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Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl₂In₂S₃Se Crystals in Near-Infrared Optical Limiting Applications

Doğan,

Karatay,

Isik

et al. 2024

Crystal Growth & Design

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The present study represents the effect of defect states on the nonlinear absorption and optical limiting performances of TlInSSe and Tl 2 In 2 S 3 Se single crystals with near-infrared excitations. The band gap energies were 2.2 and 2.22 eV, and the Urbach energies were 0.049 and 0.034 eV for TlInSSe and Tl 2 In 2 S 3 Se, respectively. The trapping time of localized defect states was found to be 8 ns by femtosecond transient absorption measurements. The analysis of openaperture Z-scan data depends on two different fitting models to determine the effect of defect states on the nonlinear absorption (NA) properties of the studied crystals. Model 1 only considers two-photon absorption (TPA), while model 2 includes onephoton absorption (OPA), TPA, and free carrier absorption (FCA). The NA coefficients (ß eff ) obtained from model 2 are higher than the values (ß) obtained from model 1 at the same intensities, revealing that defect states contribute to NA through OPA. The optical limiting properties of the TlInSSe and Tl 2 In 2 S 3 Se crystals were examined under 1064 nm wavelength excitation. The limiting thresholds were found to be 1.16 and 0.27 mJ/cm 2 at 29.8 GW/ m 2 and 99.5 GW/m 2 input intensities, respectively. The results show that TlInSSe and Tl 2 In 2 S 3 Se crystals have promising potential for near-infrared optical limiting applications.

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Influence of oxygen incorporation on infrared transmission of ternary Ge-Sb-Se chalcogenide glass in the compositional range for use in infrared-imaging applications

Cited by 7 publications

References 19 publications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Obtaining ultra-high hardness in spark plasma sintered Ge40As40Se20 bulk glass

Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl₂In₂S₃Se Crystals in Near-Infrared Optical Limiting Applications

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Influence of oxygen incorporation on infrared transmission of ternary Ge-Sb-Se chalcogenide glass in the compositional range for use in infrared-imaging applications

Cited by 7 publications

References 19 publications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Obtaining ultra-high hardness in spark plasma sintered Ge40As40Se20 bulk glass

Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl2In2S3Se Crystals in Near-Infrared Optical Limiting Applications

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Product

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Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the TlInsse and Tl₂In₂S₃Se Crystals in Near-Infrared Optical Limiting Applications