Influence of oxygen incorporation on the defect structure of GaN microrods and nanowires. An XPS and CL study

Guzmán, G.; Herrera, Manuel; Silva, R; Vásquez, G. Cristian; Maestre, David

doi:10.1088/0268-1242/31/5/055006

Cited by 21 publications

(14 citation statements)

References 43 publications

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“…In addition, Ga-O bond peak centered at 530.5 eV in O1s core level spectra further provided that the nature of GaN NCs involved oxygen elements, as illustrated in Fig. 4(c) 28 .…”

Section: Resultsmentioning

confidence: 80%

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Lee

Baik

et al. 2020

Sci Rep

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While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we report the oxygen-incorporated a-plane GaN NCs with highly visible illumination excitonic recombination characteristics. Epitaxially aligned a-plane NCs with average diameter of 100 nm were formed on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), accompanied by the oxygen supply during the growth. X-ray photoemission spectroscopy measurements proved that the NCs exhibited Ga-O bonding in the materials, suggesting the formation of oxidized states in the bandgap. It was found that the NCs emitted the visible luminescence wavelength of 400-500 nm and 680-720 nm, which is attributed to the transition from oxygen-induced localized states. Furthermore, time-resolved photoluminescence studies revealed the significant suppression of the quantum confined Stark effect and highly efficient excitonic recombination within GaN NCs. Therefore, we believe that the HVPE nonpolar GaN NCs can guide the simple and efficient way toward the nitride-based next-generation nanophotonic devices.

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“…In addition, Ga-O bond peak centered at 530.5 eV in O1s core level spectra further provided that the nature of GaN NCs involved oxygen elements, as illustrated in Fig. 4(c) 28 .…”

Section: Resultsmentioning

confidence: 80%

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Lee

Baik

et al. 2020

Sci Rep

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“…Figure (c) and (d) shows the deconvoluted XPS spectra of the O 1s and N 1s signals, respectively. In Figure (c), the component of 530 eV corresponds to the ZnO bonds, the component of 531 eV correspond to CO bonds and the component of 532 eV to single bonded oxygen atoms with different hydrocarbon molecules . Figure (d) revealed two components for the N 1s signal centered at 397 and 400 eV that corresponds to the Zn‐N bond, and to terminally bonded well screened molecular nitrogen, respectively …”

Section: Resultsmentioning

confidence: 95%

Poole‐Frenkel Conduction Mechanism in ZnO:N Nanobelts

Carrera-Gutiérrez¹,

Murillo²,

Rivero

et al. 2018

Physica Status Solidi (a)

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In this paper, the authors demonstrate that the electrical conduction along ZnO:N nanobelts follow a conduction mechanism type Poole‐Frenkel. Electrical measurements obtained using the conductive‐AFM (C‐AFM) technique and between two In/W electrodes of single ZnO:N nanobelts confirm this result. These measurements reveal that the dielectric constant, ϵr, of the ZnO nanobelts, is about 4.3. Cathodoluminescence (CL) spectra acquired from single ZnO:N nanobelts show a strong signal centered at 3.23, with two‐phonon replicas at 3.15 and 3.08 eV, generated by a donor‐acceptor pair (DAP) transition besides a signal centered at 3.29 eV corresponding with a free electron‐acceptor (FA) transition. The authors propose the presence of NO as acceptor centers to explain the origin of these electronic transitions. X‐ray photoelectron spectroscopy measurements confirm the presence of this substitutional impurity, revealing an N 1s signal corresponding with ZnN bonds. The authors propose that NO acceptor centers participate as defect traps that originate the Poole‐Frenkel conduction mechanism.

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“…We had previously identified these line defects as edge dislocations 31 generated by atomic stacking faults (planar defects 32 ) that promote the incorporation of oxygen into the GaN lattice at high concentrations. 19 HRTEM images obtained near the end of one of these nanowires show atomic planes spaced by approximately 5 Å corresponding to the wurtzite (0001) planes [inset in Fig. 5(b)].…”

Section: Resultsmentioning

confidence: 99%

“…The non-magnetic nichrome Ni 0.8 Cr 0.2 buffer layer deposited by thermal evaporation onto Si(100) allowed optimal adherence of the GaN structures with the substrates. As shown in Table I, four samples were synthesized at temperatures and growth times in accordance with previous studies, 18,19 using NH 3 (Infra 99.9%) as carrier gas at flows between 12 and 16 sccm. The powder mix was placed in an alumina boat at the center of the furnace, evaporated at 1200 C, and diffused upstream of the ammonia flow toward four aligned NiCr/Si(100) substrates along the quartz tube.…”

Section: Introductionmentioning

confidence: 99%

Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures

Guzmán

Escudero

Silva

et al. 2018

Journal of Applied Physics

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We present a study of the influence of gallium vacancy (V Ga) point defects on the ferromagnetic properties of GaN:Mn and GaN:Mn,O micro-and nanostructures. Results demonstrate that the generation of these point defects enhances the ferromagnetic signal of GaN:Mn microstructures, while incorporation of oxygen as an impurity inhibits this property. XPS measurements revealed that Mn impurities in ferromagnetic GaN:Mn samples mainly exhibit a valence state of 2þ. Cathodoluminescence (CL) spectra from Mn-doped GaN samples displayed emissions centered at about 1.97 eV, attributed to transitions between the 4 T 1-6A 1 states of the Mn 2þ d orbitals, and emissions centered at 2.45 and 2.9 eV, associated with the presence of V Ga. CL measurements also revealed a blue shift of the GaN band-edge emission generated by the expansion of the wurtzite lattice due to Mn incorporation, which was confirmed by XRD measurements. These latter measurements also revealed an amorphization of GaN:Mn due to the incorporation of oxygen as impurities. The GaN:Mn samples were synthesized by thermal evaporation of GaN and MnCO 3 powders onto Ni 0.8 Cr 0.2 /Si(100) in a horizontal furnace operated at low vacuum. The residual air inside the system was used as a source of oxygen during the synthesis of Mn and O co-doped GaN nanostructures. Mn and O impurities were incorporated into the nanostructures at different concentrations by varying the growth temperature. Energy Dispersive Spectroscopy, XRD, and XPS measurements confirmed that the obtained samples predominantly consisted of GaN.

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Influence of oxygen incorporation on the defect structure of GaN microrods and nanowires. An XPS and CL study

Cited by 21 publications

References 43 publications

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Poole‐Frenkel Conduction Mechanism in ZnO:N Nanobelts

Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures

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