Influence of Oxygen on Ga₂O₃ Deposition at Low Temperature by MOCVD

Abstract

In this study, thin films of Ga 2 O 3 were fabricated on sapphire substrates utilizing metal−organic chemical vapor deposition technology, with deposition conducted at a temperature of 400 °C. The investigation focused on examining the influence of oxygen on the surface morphology, phase transition, and optical characteristics of Ga 2 O 3 films synthesized at relatively low temperatures. X-ray diffraction tests indicated that all films were polycrystalline and had mixed β and ε phases. With an increase in oxygen flow rate from 1400 to 1800 sccm, β-Ga 2 O 3 became the dominant material. Atomic force microscope analysis showed that the root-mean-square roughness had decreased. Film thicknesses, as measured by scanning electron microscopy, were 285.3, 257.6, 243.2, and 254.2 nm, respectively. The high-resolution transmission electron microscope confirmed a mixed-phase structure at an oxygen rate of 2100 sccm. Moreover, the X-ray photoelectron spectroscopy results show that increasing the oxygen flow rate from 1400 to 1800 sccm is effective in reducing the oxygen vacancies and defects in the films. However, excessive oxygen flow (2100 sccm) leads to the exacerbation of prereaction and the deterioration of the film's crystalline quality.

Synaptic properties of GaOx-based memristor with amorphous GaOx deposited by RF magnetic sputtering

“…Figure 3(b) illustrates the Ga 2p doublet, with Ga 2p1/2 at 1144.88 eV and Ga 2p3/2 at 1117.98 eV, separated by 26.9 eV, which originates from Ga 3+ . 42 The O 1s peak at 530.88 eV is deconvoluted into two peaks at 530.58 and 531.28 eV, corresponding to the Ga-O bond and oxygen vacancies, respectively, 43 as shown in Fig. 3(c).…”

Epitaxial Growth of p-Type Cu-Doped Ga2O3 Nanoarrays on MgO Substrates

“…However, there are rare reports on the preparation of Cu-doped β-Ga 2 O 3 nanoarrays by chemical vapor deposition (CVD). Additionally, most of the substrates used for epitaxial growth of Ga 2 O 3 materials are sapphire substrates. ,− There are few studies on the use of MgO, which is physicochemically stable and has a much lower lattice mismatch, as the substrate for epitaxial growth of Ga 2 O 3 . This study utilized the vapor–liquid–solid (VLS) growth mechanism to build neatly aligned Cu-doped β-Ga 2 O 3 nanoarrays on MgO substrates using a simple and inexpensive CVD method.…”