1963
DOI: 10.1111/j.1151-2916.1963.tb11732.x
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Influence of Oxygen Partial Pressure on Properties of Semiconducting Barium Titanate

Abstract: June 1 !1B3Journal of 7'he American Ceramic (3) At GOO'C, tlic large specimens showed a relatively large increase in density (1%) for runs up to 20 minutes. Devitrificatioii occurred along the edges of the specimens when rum were made for 45 minutes. X-ray investigation indicated the formation of coesite. As the specimens were not sealed in the platinum, some water vapor may have catalyzed the reaction. No bircfringencc mcasuremcnt could be made, as the cracks were too numerous; the specimens were definitely … Show more

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Cited by 29 publications
(8 citation statements)
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“…There is only a slight increase at the T c of ∼175°C. This is consistent with the traditional BT PTCR ceramics when sintered in a reducing atmosphere 13 . It has been known that the reduction–reoxidation method can also be used to fabricate BT–BNT ceramics 14,15 .…”
Section: Resultssupporting
confidence: 86%
See 1 more Smart Citation
“…There is only a slight increase at the T c of ∼175°C. This is consistent with the traditional BT PTCR ceramics when sintered in a reducing atmosphere 13 . It has been known that the reduction–reoxidation method can also be used to fabricate BT–BNT ceramics 14,15 .…”
Section: Resultssupporting
confidence: 86%
“…This is consistent with the traditional BT PTCR ceramics when sintered in a reducing atmosphere. 13 It has been known that the reductionreoxidation method can also be used to fabricate BT-BNT ceramics. 14,15 In this work, the sintered BBNT5 was reoxidized at 11001C for 2 h in air, which also shows a remarkable PTCR effect of 3.2 orders of magnitude (as shown in the inset of Fig.…”
Section: Methodsmentioning
confidence: 99%
“…In this model the rapid increase in grain boundary resistivity above T C is explained in terms of the combined effects of a sudden decrease in permittivity, the presence of filled acceptor traps at the grain boundaries within a segregated layer of acceptor ions (Heywang, 1971) or associated with adsorbed oxygen (Kuwabara, 1984;Tien and Carlson, 1963), and the loss of ferroelectric polarization, which together allow the development of back-to-back opposed electrostatic barriers at the grain boundaries. The structures so formed are termed double Schottky barrier (DSB) structures.…”
Section: Introductionmentioning
confidence: 99%
“…RE ions are trivalent in most of their compounds, 14,15 and generally occupy Ba sites of BaTiO 3 . Charge equilibrium may be compensated by electrons, [16][17][18] A-site Ba vacancies, 19,20 B-site Ti vacancies 1,2,21,22 or the 3d 1 Ti 3ࢪ mode, [23][24][25] due to the different preparation techniques and ratios of starting compositions.…”
Section: -5mentioning
confidence: 99%