Influence of oxygen partial pressure on the strain behaviour of reactively co-sputtered Ga doped ZnO thin films

Appani, Shravan K.; Singh, Devendrá; Nandi, Raju; Sutar, D.S.; Major, S.S.

doi:10.1016/j.tsf.2022.139624

Cited by 7 publications

(3 citation statements)

References 73 publications

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“…Compared to pure ZnO, the strong reduction in resistivity of the GZO films results from increasing both the carrier concentration and mobility. The electrical properties obtained for the GZO film are also better than those of some previous reports 13,14 . The conductivity of a pure ZnO film is normally relatively low, mainly dominated by the low carrier concentration generated from oxygen vacancies and zinc interstitials 15 .…”

Section: Electrical Propertiescontrasting

confidence: 42%

Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

2023

Sci. Tech. Dev. J.

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Introduction: Transparent conducting films have received much attention in energy conversion applications. To replace high-cost indium-tin-oxide (ITO), Ga-doped ZnO (GZO) film is considered due to its high conductivity, good transparency, low cost, and low toxicity. Methods: GZO and pure ZnO films were deposited on glass substrates by dc magnetron sputtering. The crystalline structure of the samples was verified by using X-ray diffraction. In particular, the relationship between the electrical and optical characterization of the GZO film was investigated through the plasma wavelength obtained from transmittance and reflectance spectra. Meanwhile, carrier transport was directly confirmed by Hall effect-based measurements. Results: The GZO film shows a hexagonal wurtzite structure, with successful incorporation of Ga into the ZnO lattice. Ga doping increases the carrier concentration, leading to a decrease in the resistivity of the film. This study also discusses the correlation of carrier transport obtained from Hall effect-based measurements and optical spectroscopies. Here, we extracted the optical carrier concentration and optical mobility from the plasma wavelength and compared them with the Hall data. Conclusion: The dependence of carrier transport on ionized impurity scattering can be pointed out. It proposes an effective way to qualitatively predict the electrical characteristics and transport properties of thin films via optical transmittance and reflectance analysis.

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Section: Electrical Propertiescontrasting

confidence: 42%

Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

2023

Sci. Tech. Dev. J.

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“…A number of methods have been used to produce GZO thin films, e.g., magnetron sputtering [18], chemical vapor deposition (CVD) [13,19], spray pyrolysis [20], and chemical solution deposition (CSD) [11,14,21,22]. CSD offers several advantages for product commercialization, such as deposition in a vacuum-free environment, simple equipment, low fabrication costs, and effective control of the chemical stoichiometry.…”

Section: Introductionmentioning

confidence: 99%

Gallium-Modified Zinc Oxide Thin Films Prepared by Chemical Solution Deposition

Stojanoska,

Kmet,

Uršič

et al. 2023

Crystals

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Gallium-doped ZnO (GZO) thin films on glass, which can be used as transparent electrodes, were prepared using a spin coating technique. Thermal analysis and Fourier-transform infrared spectroscopy of the dried precursor solution of Zn acetate and Ga nitrate dissolved in ethanol with diethanolamine confirmed the decomposition of the organic components upon heating and the formation of ZnO at 450 °C. The thin films fired at 600 °C in oxygen and air, and the films annealed at 400 °C in Ar/H2, were polycrystalline, 140 nm thick, and exhibited a homogeneous microstructure with 50 nm grains and a smooth surface, as shown by X-ray powder diffraction and scanning electron and atomic force microscopy. The sheet resistance Rs measured using the 4-probe technique showed a change in Rs within 80 days for all samples. The Rs of the GZO thin films annealed in oxygen and air with values of MΩ/sq decreased over time. Rs values of 150 kΩ/sq were obtained for GZO thin films annealed in Ar/H2, but the Rs increased over time. We suggest that the degradation of Rs is related to the adsorption of water on GZO and that the responses depend on the nature of the defects in the GZO lattice.

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“…According to their characterization methods, the crystalline size, film resistivity, and optical band gap values enhanced under 1.0 Pa deposition pressure as 27.5 nm, 4.48 × 10 −4 Ω.cm, and 3.3 eV, respectively [40]. Appani et al investigated the strain behavior of GZO thin films with different oxygen pressures and they revealed that the crystalline size decreased, and tensile strain increased with the increase of O 2 percentage [41].…”

Section: Introductionmentioning

confidence: 99%

Enhanced photovoltaic performance of silicon-based solar cell through optimization of Ga-doped ZnO layer

Erkan,

Altuntepe,

Yazici

et al. 2023

Phys. Scr.

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In the present study, the impact of deposition pressure and substrate temperature of Ga-doped Zinc Oxide (GZO) thin film and the photovoltaic performance of this structure as a transparent conductive oxide (TCE) layer in silicon-based solar cell were investigated. Implementing a single target of GZO, the structural, optical, and electrical properties of 350 nm thick GZO thin films with various deposition pressure (5 mTorr, 10 mTorr, 15 mTorr and 20 mTorr) at room temperature (RT) and substrate temperature (RT, 150 °C, 200 °C, 250 °C) at 15 mTorr deposition pressure were fabricated using RF magnetron sputtering technique. The aim here was to find out the GZO films with the optimum pressure and substrate temperature to incorporate them into solar cell as a TCE layer. The X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques were used to determine the structural properties of all samples. The optical transmission measurements were performed using spectroscopic Ellipsometer and the band gap values were calculated by Tauc plot using optical transmission data. In addition, the electrical characterization of the GZO samples were analyzed by the Van der Pauw method and Hall measurements. Finally, the most promising GZO thin film was determined based on the structural and optoelectrical characterization. The findings indicated that the XRD pattern of all the prepared films was dominated by (002) preferential orientation irrespective of the deposition pressure and substrate temperature. The AFM measurements showed that all the samples had a dense surface morphology regardless of the deposition pressures, but the surface morphology of the samples was clearly changed upon increasing substrate temperatures. The transmission values of the film did not significantly alter (∼82%) when the deposition pressures except for the substrate temperature of 200 °C (86%) were changed. The band gap values were calculated between 3.30 eV and 3.36 eV, which can be associated with enhancement of crystalline quality of the films. The lowest resistivity and the highest carrier concentration values belonged to the film fabricated at 15 mTorr@200 °C by 2.0 × 10−3 Ω.cm and 1.6 × 1020 cm−3, respectively. Both increasing the deposition pressure (up to 15 mTorr) and substrate temperature (up to 200 °C) contributes to improving the crystallite size, widening the optical band gap, lowering the resistivity, and increasing the carrier concentration. In order to evaluate and compare the effect of both deposition pressure and substrate temperature, Silicon-based solar cells were fabricated using the most promising layers (15 mTorr@RT, 15 mTorr@200 °C). The cell performance with the GZO thin film as a TCE layer showed that varying both the pressure and substrate temperature of the GZO film contributed to enhancing the solar cell parameters. Thus, the conversion efficiency increased from 9.24% to 12.6% with the sequential optimization of pressure and temperature. It can be concluded that the pressure applied during the deposition and substrate temperature had a significant impact on the properties of GZO thin films and its photovoltaic performance of solar cell used as TCE layer.

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Influence of oxygen partial pressure on the strain behaviour of reactively co-sputtered Ga doped ZnO thin films

Cited by 7 publications

References 73 publications

Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

Gallium-Modified Zinc Oxide Thin Films Prepared by Chemical Solution Deposition

Enhanced photovoltaic performance of silicon-based solar cell through optimization of Ga-doped ZnO layer

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