2006
DOI: 10.1063/1.2355435
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Influence of phonon, geometry, impurity, and grain size on Copper line resistivity

Abstract: Articles you may be interested inClassical size effect in oxide-encapsulated Cu thin films: Impact of grain boundaries versus surfaces on resistivity J. Vac. Sci. Technol. A 26, 605 (2008); 10.1116/1.2938395Electrical resistivity of Cu films deposited by ion beam deposition: Effects of grain size, impurities, and morphological defect

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Cited by 134 publications
(95 citation statements)
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“…The experiment data from Ref. 16 is depicted by "*", and the result of present model is shown by solid line, the result of MS model is shown by dashed line, and the result of Dingle model is shown by dot-dash line. As we have mentioned that R and p are material-dependent parameters and irrelevant to the shape, so we used the R and p values already verified in thin films by the MS model, which keep unchanged for nanowires.…”
Section: Discussionmentioning
confidence: 99%
“…The experiment data from Ref. 16 is depicted by "*", and the result of present model is shown by solid line, the result of MS model is shown by dashed line, and the result of Dingle model is shown by dot-dash line. As we have mentioned that R and p are material-dependent parameters and irrelevant to the shape, so we used the R and p values already verified in thin films by the MS model, which keep unchanged for nanowires.…”
Section: Discussionmentioning
confidence: 99%
“…Also, although surface scattering is expected to be the most important contribution to resistance at dimensions of a few nanometers, the contribution of electron-phonon scattering at finite temperatures cannot be neglected. Plombon et al [6] report a decomposition of the resistance of copper lines with widths ranging from 75 to 500 nm with electron-phonon scattering estimated to account for 60% of the resistivity at a temperature of 300 K. The effects of electron-phonon interactions on resistivity in sub-5-nm copper NWs are currently unknown and have been excluded from this study. It is worth noting that for interconnect applications, these NWs' function would be to provide electrical contact between devices (e.g., transistors) across a short length and with small voltage drops, ideally zero.…”
Section: Methodsmentioning
confidence: 99%
“…It is required that the electrical conductivity of small cross-section copper nanostructures be understood to maintain acceptable power consumption in future nanoelectronics generations. In particular, the contribution of the individual scattering sources, such as surfaces [4], grain boundaries [5], electron-phonon interaction [6], and impurities, to overall resistivity needs to be assessed to aid development of interconnects which minimize line resistance. A succinct overview of these issues can be found in the review of Josell, Brongersma, and Tőkei [7].…”
Section: Introductionmentioning
confidence: 99%
“…For surface contributions, we concentrate on scattering by surface roughness that can account for more than half of the overall resistivity of nanosystems. 5 This assumes that the surface-driven reconstruction of the energy spectrum is less important as it is often the case in good metals. We also disregard the scattering by grain boundaries.…”
Section: Introductionmentioning
confidence: 99%