Influence of phosphine on the diamond growth mechanism: a molecular beam mass spectrometric investigation

Tsang, RS; May, Paul; Ashfold, Michael N. R.; Rosser, KN

doi:10.1016/s0925-9635(98)00234-9

Cited by 13 publications

(9 citation statements)

References 24 publications

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“…Although uncommon, mass spectrometry studies of certain CVD reactions have been carried out in the past including deposition of cuprous films from copper(I) cyclopentadienyltriethylphosphine using a time-of-flight (TOF) spectrometer 23 and deposition of silicon carbide from a tetraethylsilane precursor using hot-wire CVD. 24 Rego, Petherbridge and Tsang et al have completed mass spectroscopic studies on the CVD of diamond from methane, to measure the levels of CH4, C2H6, C2H4 and C2H2 and CH3 in the gas phase, 25 as well as the effect of N2, 26 Cl2, 27 and PMe3 28 on the growth mechanics. In addition, analysis of titanium containing precursors have been carried out using mass spectrometry.…”

Section: Introductionmentioning

confidence: 99%

In situ mass spectrometry analysis of chemical vapour deposition of TiO₂thin films to study gas phase mechanisms

et al. 2016

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Section: Introductionmentioning

confidence: 99%

In situ mass spectrometry analysis of chemical vapour deposition of TiO₂thin films to study gas phase mechanisms

et al. 2016

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“…Later work in our group used MBMS to sample gas directly from the plasma, thus probing the gas phase chemistry in isolation, with minimum perturbation from gas-surface reactions. We have used this powerful technique to obtain absolute mole fractions of the gas phase species present in both hot filament [20][21][22][23] and microwave systems 24 -26 for a variety of gas mixtures and dopant gas additions. We now report the results of using MBMS to make in situ measurements of species mole fractions, as a function of both input gas composition and temperature, for both microwave ͑MW͒ and hot filament ͑HF͒ activation of the gas phase chemistry, using gas mixtures suitable for producing S-doped diamond.…”

Section: Introductionmentioning

confidence: 99%

Sulfur doping of diamond films: Spectroscopic, electronic, and gas-phase studies

Petherbridge

May

Fuge

et al. 2002

Journal of Applied Physics

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Chemical vapor deposition ͑CVD͒ has been used to grow sulfur doped diamond films on undoped Si and single crystal HPHT diamond as substrates, using a 1% CH 4 /H 2 gas mixture with various levels of H 2 S addition ͑100-5000 ppm͒, using both microwave ͑MW͒ plasma enhanced CVD and hot filament ͑HF͒ CVD. The two deposition techniques yield very different results. HFCVD produces diamond films containing only trace amounts of S ͑as analyzed by x-ray photoelectron spectroscopy͒, the film crystallinity is virtually unaffected by gas phase H 2 S concentration, and the films remain highly resistive. In contrast, MWCVD produces diamond films with S incorporated at levels of up to 0.2%, and the amount of S incorporation is directly proportional to the H 2 S concentration in the gas phase. Secondary electron microscopy observations show that the crystal quality of these films reduces with increasing S incorporation. Four point probe measurements gave the room temperature resistivities of these S-doped and MW grown films as ϳ200 ⍀ cm, which makes them ϳ3 times more conductive than undoped diamond grown under similar conditions. Molecular beam mass spectrometry has been used to measure simultaneously the concentrations of the dominant gas phase species present during growth, for H 2 S doping levels ͑1000-10 000 ppm in the gas phase͒ in 1% CH 4 /H 2 mixtures, and for 1% CS 2 /H 2 gas mixtures, for both MW and HF activation. CS 2 and CS have both been detected in significant concentrations in all of the MW plasmas that yield S-doped diamond films, whereas CS was not detected in the gas phase during HF growth. This suggests that CS may be an important intermediary facilitating S incorporation into diamond. Furthermore, deposition of yellow S was observed on the cold chamber walls when using H 2 S concentrations Ͼ5000 ppm in the MW system, but very little S deposition was observed for the HF system under similar conditions. All of these results are rationalized by a model of the important gas phase chemical reactions, which recognizes the very different gas temperature profiles within the two different types of deposition reactor.

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“…SH concentration that adsorbs onto the diamond surface and undergoes subsequent incorporation reactions. 79 Recently, successful n-doping has been achieved by using PH 3 as a gas additive; for instance, Tsang et al 80 report the HFCVD of P-doped diamond films from a 1% CH 4 in H 2 gas mixture, with increasing amounts of PH 3 (from 1000 to 5000 ppm). Similarly to the case of ammonia and other N-containing gaseous precursors, where stable HCN is formed, complete phosphine decomposition is achieved at filament temperatures higher than 1700 uC, leading to HCP production.…”

Section: ''Hot Filament'' Cvdmentioning

confidence: 99%

“…However, it seems that HCP is not stable above 2124 uC and mass spectrometric investigations, like that presented in ref. 80, have been carried out indirectly, assuming HCP to be the only C-containing species responsible for any 'missing' component of the total C balance. Due to the weakness of the P-H bond (321 kJ mol 21 ), almost all the PH 3 dissociates at a temperature at which the filament-catalyzed decomposition of H 2 is still rather inefficient; as a result, the production of methyl radicals can also be driven by these low temperature-produced H atoms, leading to a greater ?…”

Section: ''Hot Filament'' Cvdmentioning

confidence: 99%

Synthesis of diamond

Ferro

2002

J. Mater. Chem.

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Diamond is impressive because of its wide range of extreme properties. By most measures, diamond is 'the biggest and best': it is the hardest known material, has the lowest coefficient of thermal expansion, is chemically inert and wear resistant, offers low friction, has high thermal conductivity, and is electrically insulating and optically transparent from the ultraviolet to the far infrared. Diamond already finds use in many different applications including, of course, its use as a precious gem, but also as a heat sink, as an abrasive, and as inserts and/or wear-resistant coatings for cutting tools. Obviously, it is possible to envisage many other potential applications for diamond as an engineering material, but progress in implementing many such ideas has been hampered by the comparative scarcity of natural diamond. This paper reports on the progress of the long running quest for ways to synthesize diamond in the laboratory

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Influence of phosphine on the diamond growth mechanism: a molecular beam mass spectrometric investigation

Cited by 13 publications

References 24 publications

In situ mass spectrometry analysis of chemical vapour deposition of TiO₂thin films to study gas phase mechanisms

In situ mass spectrometry analysis of chemical vapour deposition of TiO₂thin films to study gas phase mechanisms

Sulfur doping of diamond films: Spectroscopic, electronic, and gas-phase studies

Synthesis of diamond

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Influence of phosphine on the diamond growth mechanism: a molecular beam mass spectrometric investigation

Cited by 13 publications

References 24 publications

In situ mass spectrometry analysis of chemical vapour deposition of TiO2thin films to study gas phase mechanisms

In situ mass spectrometry analysis of chemical vapour deposition of TiO2thin films to study gas phase mechanisms

Sulfur doping of diamond films: Spectroscopic, electronic, and gas-phase studies

Synthesis of diamond

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In situ mass spectrometry analysis of chemical vapour deposition of TiO₂thin films to study gas phase mechanisms

In situ mass spectrometry analysis of chemical vapour deposition of TiO₂thin films to study gas phase mechanisms