Influence of phosphorus-induced point defects on a gold-gettering mechanism in silicon

Lecrosnier, D.; Paugam, Jean Paul; Richou, F.; Pelous, G.; Bénière, F.

doi:10.1063/1.327732

Cited by 33 publications

(13 citation statements)

References 11 publications

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“…The effectiveness of phosphorus as a gettering agent was first recognized in 1960 [11], and has been extensively studied [12][13][14][15][16][17][18]. By the use of in-situ doped polysilicon, both polysilicon and phosphorus are present on the back side of the wafer for gettering.…”

Section: Detector Fabrication and Experimental Resultsmentioning

confidence: 99%

An IC-compatible detector process

Holland

1989

IEEE Trans. Nucl. Sci.

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A silicon radiation-detector fabrication process which exploits the excellent gettering properties of a backside layer of phosphorus-doped poly silicon has been developed and characterized. 2 !DID diameter pi-n diodes have been fabricated with typical reversebias current densities of approximately 1 nAlcm 2 • In addition, a strip detector with 128 strips of 6 !DID length on a 55 ~m pitch has been successfully fabricated with better than 10% uniformity in the diode reverse-bias currents. The process is compatible with conventional integrated-circuit fabrication technologies, and p-channel enhancement and depletion-mode MOSFETs with associated inter-device isolation have been fabricated simultaneously on detector-grade silicon with p-i-n radiation detectors.

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Section: Detector Fabrication and Experimental Resultsmentioning

confidence: 99%

An IC-compatible detector process

Holland

1989

IEEE Trans. Nucl. Sci.

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“…This was the case in the old work of Buck, et al, [27 (Cu, Ni were fast diffusers and appeared to getter better, while Fe was weakly gettered) and in the more recent work of Colas, Weber and Hahn [15] Schematic for phosphorous diffusion gettering: profiles (upper) show capture aspect -since Au and Cu are substitutional -and require a vacancy [4,5,8], while the illustration (lower) shows Si self-interstitials injected from SiP phase formation [13], SF growth [11] and enhanced Au diffusivity by a kick-out mechanism [12]. In most cases where gettering has been demonstrated, the diffusion process is the rate limiting step.…”

Section: Introductionmentioning

confidence: 93%

Gettering In Silicon

Seidel

1986

MRS Proc.

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This paper reviews the basis for phenomenological path for gettering: release, diffusion and capture in the context of old and new developments. More recent precipitation studies in silicon are now recognized to involve complex interactive effects.Controlled precipitation requires knowledge of and control of not only oxygen but carbon, native defects (related to crystal thermal history and/or process history), high doping, microfluctuations and interactions between "extrinsic" and "intrinsic" gettering.

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“…8). These factors lead to higher effective impurity segregation coefficient [11,16,28] for POCl 3 diffusion. Notice that the bulk lifetime trend is opposite of the iron concentration, indicating that iron contamination is one of the major sources of bulk lifetime degradation in these p-type samples.…”

Section: [Fe]= C(1/ τ Eff1 -1/ τ Eff0 ) Eq (1)mentioning

confidence: 99%

Comparison of POCl3 diffusion and phosphorus ion-implantation induced gettering in crystalline Si solar cells

Cho

Dahal

et al. 2016

Solar Energy Materials and Solar Cells

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Most p-type Si solar cells involves phosphorus-doped emitter by POCl 3 diffusion or phosphorus ionimplantation. Although the formation of the phosphorus emitter is known to getter impurities like Fe, the difference in the impact of these two gettering techniques on cell performance is not well quantified. Therefore, this paper compares the gettering efficiency of POCl 3 diffusion and phosphorus ionimplantation on Czochralski(Cz) and cast quasi-mono Si wafers. Cz-Si wafers were used to measure bulk lifetime and iron concentration before and after POCl 3 diffusion and phosphorus implantation with different doses. Increase in phosphorus implantation dose improved the gettering efficiency by increasing bulk lifetime and decreasing iron concentration but remained inferior to POCl 3 diffusion partly due to single side gettering as opposed to double side gettering with higher phosphorus surface concentration during POCl 3 diffusion. Moreover, large-area solar cells were fabricated on cast quasi-mono and Cz-Si wafers to quantify the impact of these emitters on cell parameters. POCl 3 diffused cast quasi-mono cells showed ~0.4% higher efficiency due to higher bulk lifetime compared to phosphorus implanted emitter. However, phosphorus implanted Cz cells gave ~0.3% higher efficiency due to lower emitter saturation current, resulting from the benefit of in-situ oxide surface passivation during the implant anneal.

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Influence of phosphorus-induced point defects on a gold-gettering mechanism in silicon

Cited by 33 publications

References 11 publications

An IC-compatible detector process

An IC-compatible detector process

Gettering In Silicon

Comparison of POCl3 diffusion and phosphorus ion-implantation induced gettering in crystalline Si solar cells

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