Influence of plasma chemistry on the properties of a-(Si,Ge):H alloys

Dalal, Vikram L.; Haroon, Sohail; Zhou, Zhiyang; Maxson, Tim; Han, Kay

doi:10.1016/s0022-3093(00)00034-x

Cited by 19 publications

(10 citation statements)

References 4 publications

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“…The growth chemistry is very important for the quality of the material [35][36][37][38][39][40][41]. A good growth mechanism will result in a better material.…”

Section: Growth Chemistrymentioning

confidence: 99%

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Low bandgap α-(Si,Ge):H and α-(Ge):H devices

Zhou

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“…The growth chemistry is very important for the quality of the material [35][36][37][38][39][40][41]. A good growth mechanism will result in a better material.…”

Section: Growth Chemistrymentioning

confidence: 99%

“…If we use high hydrogen dilution, then reaction 1 and 4 are predominant and XH3 will be the major radical. Besides, hydrogen has other effects during the growth: passivate the dangling bonds, etch the surface hydrogen, break ihe weaker Si-Si and Ge-Ge bonds (etching during growth) etc [35][36][37][38][39][40][41].…”

Section: Growth Chemistrymentioning

confidence: 99%

Low bandgap α-(Si,Ge):H and α-(Ge):H devices

Zhou

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“…This system offers unique advantages in being able to dope the electron transporting layer heavily, thereby assuring an ohmic tunnel-junction contact with the transparent conducting layer such as ZnO, and also systematically change the positions of the conduction and valence bands by mixing Si with Ge and C. In general, adding C will tend to move up the conduction band and move down the valence band, increasing the bandgap, 9 whereas adding Ge will primarily move up the valence band and decrease the bandgap. 10 A feature of adding C is that the increase in bandgap allows for less absorption of blue and uv photons in the electron transporting layer. A further significant advantage is that a-Si is almost completely inert to moisture or oxygen ingress, 11 and thereby prevents these atmospheric contaminants from affecting the performance of the solar cell.…”

Section: More Stable Hybrid Organic Solar Cells Deposited On Amorphoumentioning

confidence: 99%

More stable hybrid organic solar cells deposited on amorphous Si electron transfer layer

Samiee

Modtland

Aidarkhanov

et al. 2014

Applied Physics Letters

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We report on defect densities, performance, and stability of organic/inorganic hybrid solar cells produced using n-doped inorganic amorphous silicon-carbide layers as the electron transport layer (ETL). The organic material was poly-3-hexyl-thiophene (P3HT) and heterojunction was formed using phenyl-C71-Butyric-Acid-Methyl Ester (PCBM). For comparison, inverted solar cells fabricated using Cs2CO3 as ETL were fabricated. Defect densities and subgap quantum efficiency curves were found to be nearly identical for both types of cells. The cells were subjected to 2xsun illumination and it was found that the cells produced using doped a-Si as ETL were much more stable than the cells produced using Cs2CO3.

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“…The MGP model is used extensively to explain plasma enhanced chemical vapor deposition (PECVD) in literature; however the model doesn't account for the empirical evidence that high quality materials are formed under low pressures with high ion bombardment levels using remote plasma processes [4][5][6]. Ions are always present in plasma discharges, as they are the end product of electrons ionizing the gases present in the plasma zone of the reactor; however there are no ions present in HWCVD processes.…”

Section: 1: Backgroundmentioning

confidence: 99%

The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

Ring

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Influence of plasma chemistry on the properties of a-(Si,Ge):H alloys

Cited by 19 publications

References 4 publications

Low bandgap α-(Si,Ge):H and α-(Ge):H devices

Low bandgap α-(Si,Ge):H and α-(Ge):H devices

More stable hybrid organic solar cells deposited on amorphous Si electron transfer layer

The effects of ion bombardment during deposition upon the properties of hydrogenated amorphous silicon-germanium thin films and photovoltaic devices

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