The urgent need for more performant transparent conducting electrodes is stimulating intensive research on oxide thin films based on early transition metals (e.g., V, Nb, Mo, etc.), where it is expected that the partially occupied (i.e., nd 1 , nd 2 …) conduction band will give rise to metallic conductivity. Growing thin films of these oxides typically requires an extremely low oxygen pressure. However, in growth methods involving hyperthermal kinetics (such as pulsed laser deposition), this may have severe detrimental effects on the electrical and optical properties of the film. Here, it is shown that the use of a nonreactive gas during a pulsed laser deposition process allows epitaxial SrVO 3 films to be obtained with low room temperature resistivity (ρ ≈ 31 μΩ cm), large carrier mobility (μ ≈ 8.3 cm 2 V −1 s −1 ), and large residual resistivity ratio (RRR ≈ 11.5), while improving optical transparency in the visible range. It is argued that the success of this growth strategy relies on the modulation of energetics of plasma species and a concomitant reduction of defects in the films. These findings may find applications in other oxide-based thin film technologies (i.e., ferroelectric tunnel memories, etc.) where growth-induced point effects may compromise functionality. Figure 6. a) Optical transmittance of SVO films on LSAT, about 50 nm thick, deposited either at P(Ar) = 0 mbar (red) or at P(Ar) = 0.1 mbar (blue). Transmission spectrum of the pristine LSAT substrate is also included (black). For reference, the maximal transmittance in the visible range of state-of-the-art SVO films grown on LSAT by hybrid-MBE [20] is included (dashed line). b) Picture of the three samples displayed on the background ordered as in the legend of figure a).www.afm-journal.de www.advancedsciencenews.com 1808432 (7 of 7)