Influence of polarities on optical properties of Mg-doped GaN films grown on GaN free-standing substrates by MOCVD

Wei, Sida; Gao, Xiaodong; Wang, Xiaodan; Pan, Yangye; Zeng, Xiandong; Chen, Jiafan; Zheng, Shunan; Xu, Ke

doi:10.1016/j.jlumin.2023.119740

Journal of Luminescence

2023

DOI: 10.1016/j.jlumin.2023.119740

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Influence of polarities on optical properties of Mg-doped GaN films grown on GaN free-standing substrates by MOCVD

Sida Wei

Xiaodong Gao

Xiaodan Wang

et al.

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Effect of Mg doping on carrier recombination in GaN

Marcinkevičius,

Chow,

Nakamura

et al. 2023

Journal of Applied Physics

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Time-resolved photoluminescence measurements have been performed on Mg-doped GaN for Mg concentrations in the low- to mid-1019 cm−3. As-grown and annealed (600–675 °C) samples were studied. In the as-grown samples, the nonradiative carrier lifetime was found to be about 200 ps and nearly independent of the Mg concentration. Upon annealing, the carrier lifetimes shorten to ∼150 ps but, again, show little dependence on the annealing temperature. The analysis of possible Shockley–Read–Hall recombination centers and their behavior during doping and annealing suggests that the main nonradiative recombination center is the Mg–nitrogen vacancy complex. The weak dependence of the PL decay times on temperature indicates that carrier capture into this center has a very low potential barrier, and the nonradiative recombination dominates even at low temperatures.

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Effect of Mg doping on carrier recombination in GaN

Marcinkevičius,

Chow,

Nakamura

et al. 2023

Journal of Applied Physics

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First Principles Study on the Optoelectronic Properties of Copper and Chlorine Doped Gallium Nitride

李

2024

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Influence of polarities on optical properties of Mg-doped GaN films grown on GaN free-standing substrates by MOCVD

Cited by 2 publications

References 44 publications

Effect of Mg doping on carrier recombination in GaN

Effect of Mg doping on carrier recombination in GaN

First Principles Study on the Optoelectronic Properties of Copper and Chlorine Doped Gallium Nitride

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