Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors

Abstract

Articles you may be interested inEffects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures J. Appl. Phys. 113, 014505 (2013); 10.1063/1.4773334 Influence of the polarization on interfacial properties in Al/SiO 2 /GaN/Al 0.4 Ga 0.6 N/GaN heterojunction metal-insulator-semiconductor structures Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Vertical Electron Transport in GaN/AlGaN Heterostructures

“…This result implies that the considered structure is able to operate as efficient frequency tripler in the submillimeter frequency range. The results of experimental study of the double-barrier Al 0.4 Ga 0.6 N/GaN structure are reported in [7]. The composition of the structure experimentally investigated in [7] is the same as the one simulated in the present work except for the barrier thickness.…”

“…The results of experimental study of the double-barrier Al 0.4 Ga 0.6 N/GaN structure are reported in [7]. The composition of the structure experimentally investigated in [7] is the same as the one simulated in the present work except for the barrier thickness. The barrier thickness of the structure measured in [7] is increased to 20 nm.…”

“…The composition of the structure experimentally investigated in [7] is the same as the one simulated in the present work except for the barrier thickness. The barrier thickness of the structure measured in [7] is increased to 20 nm. The experimental results of [7] demonstrate the poor quality of the C−V characteristic.…”

“…The barrier thickness of the structure measured in [7] is increased to 20 nm. The experimental results of [7] demonstrate the poor quality of the C−V characteristic. The measured C−V relationship has a small modulation ratio, and the C−V characteristic is strongly asymmetric.…”

Capacitance analysis of Al 0.25 Ga 0.75 N/GaN heterostructure barrier varactor diodes

“…As a result of these properties, a reduced leakage current and an increased capacitance modulation, as well as a high-power handling capability, can be expected. Consequently, a higher cutoff frequency can be expected [3]. In this paper, we discuss the characteristics of a HBV based on an AlGaN/GaN heterostructure two grown on a sapphire substrate.…”