2010
DOI: 10.1007/s11801-010-0021-8
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Influence of polaron effects on the ground state of weak-coupling exciton in semiconductor quantum dots

Abstract: The influence of polaron effects on the effective potential of weak-coupling exciton in semiconductor quantum dots (QDs) is studied based on the Lee-Low-Pines-Huybrechts variational method. The results show that the effective potential of the exciton consists of three parts: coulomb potential, induced potential and confining potential. Numerical calculations for the GaAs quantum dot, as an example, are performed. The result indicates that the effective potential of the exciton increases with the electron-hole … Show more

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“…Among various kinds of QD lasers, the InAs/GaAs QD laser lasing at 1.3 m can be widely used in optical communication and its typical properties make it different [4][5][6][7][8][9][10] . The device prototype in this paper based on InAs/GaAs QD laser is fabricated in dots in a well (DWELL) structure.…”
mentioning
confidence: 99%
“…Among various kinds of QD lasers, the InAs/GaAs QD laser lasing at 1.3 m can be widely used in optical communication and its typical properties make it different [4][5][6][7][8][9][10] . The device prototype in this paper based on InAs/GaAs QD laser is fabricated in dots in a well (DWELL) structure.…”
mentioning
confidence: 99%